双极流程

Bipolar technology for the manufacture of high-power npn-transistors with operating voltage of 1500 V

  • Application, features: UCE = 1500 V<br /><br /> UCE = (700-800) V<br /><br /> Ic= (5-12) A
  • Process Description: Substrate:                                    Si/ P-irradiated  /Res 102- 90<br /><br />8 masks (contact):<br /><br />Base: ion implantation depth, µm                                     20-26<br /><br />Emitter : diffusion, depth, µm                                             10-15<br /><br />collector-base p-n junction protection :                          SiPOS<br /><br />Metallization :                                                            Al      4, 5 µm<br /><br />Radiation treatment to ensure dynamics<br /><br />Backside matting<br /><br />Backside:                                                         Ti-Ni-Ag sputtering  

Bipolar technology for the manufacture of positive and negative polarity voltage regulators, two metallization levels

  • Application, features: NPN Vertical:<br /><br />h 21E =(80-200)<br /><br />UCE >=18 V<br /><br />PNP Lateral:<br /><br />h 21E>=40<br /><br />UCE >=20V<br /><br />Capacitor: n+ - Al<br /><br />Resistors in layer:<br /><br />Base; resistor
  • Process Description: Number of masks, pcs.                                                                   11-13<br /><br />Mean design rule,µm                                                                            4-5<br /><br />Substrate:                           Si/B-doped/ p-type/Thk 460/Res 10/ (111)<br /><br />Buried layers:                                    Si/Sb-doped/ n-type/Thk5/Res17;<br /><br />                                                         Si/B-doped/ p-type/Thk 1.6/Res510;<br /><br />Epi layer:                                      Si/P-doped/ n-type/Thk 10/ Res 1,25;<br /><br />Isolation:                                                                                   p-n junction<br /><br />Deep collector, separation and emitter layers have been carried out by method of diffusion.<br /><br />Base, resistor layers – by method of ion implantation<br /><br />Capacitor dielectric:                                                 Si oxide or Si nitride<br /><br />p-base depth, µm                                                                           1,8÷2,8<br /><br />N+emitter depth, µm                                                                      0,9÷2,2<br /><br />The first interlayer dielectric:        medium temperature PSG+ Si3N4<br /><br />The second interlayer dielectric:                        low temperature PSG<br /><br />The first  metallization level                                        AlSiCuTi  0,55 µm<br /><br />The second metallization level                                    AlSi, Al      1,4 µm<br /><br />Passivation:                                                         low temp. PSG   1,0 µm

Bipolar technology for the manufacture of high-power npn-transistors with Darlington

  • Application, features: UCB = (300-350) V<br /><br />UCE = (150-350) V<br /><br /> Ic= (5-15) A<br /><br /> h21E >100
  • Process Description: Epi structure:<br /><br />Substrate:                         Si/ Sb-doped/ n-type/Res 0,01 (111):<br /><br />Thickness of Epi layer, µm                                                   27-38<br /><br />Resistivity, Ohm/cm                                                                  8-21<br /><br />6-7 masks (contact)<br /><br />Base: ion implantation,<br /><br />depth, µm                                                                                     6-8<br /><br />Emitter: diffusion,<br /><br />depth, µm                                                                              2,5-5,5<br /><br />collector-base p-n junction protection :                            SiPOS<br /><br />Metallization :                                                                   Al 4, 5 µm<br /><br />Backside:                                                                            Ti-Ni-Ag<br /><br />Passivation:                                                           Low temp. PSG

Bipolar technology for the manufacture of high-power npn-transistors with the range of operating voltages: 300-700 V

  • Application, features: UCB = (300-700) V<br /><br />UCE = (300-400) V<br /><br /> Ic= (0,5-8,0) A<br /><br /> h21E =(8-40)
  • Process Description: Epi structure<br /><br />Substrate:                        Si/ Sb-doped/ n-type/Res 0,01 (111):<br /><br />Thickness of Epi layer, µm                                                 50-80<br /><br />Resistivity, Ohm/cm                                                             40-50<br /><br />7-8 masks (contact)<br /><br />Base: ion implantation,<br /><br />depth, µm                                                                             2,8-4,6<br /><br />Emitter: diffusion,<br /><br />depth, µm                                                                             1,4-2,8<br /><br />collector-base p-n junction protection:                            SiPOS<br /><br />Metallization :                                                       Al   1,4 ; 4, 5 µm<br /><br />Backside:                                                                           Ti-Ni-Ag<br /><br />Passivation:                                                         Low temp. PSG

Shottky diodes with Mo barrier

  • Application, features: Fast silicon Shottky diodes for switched mode power supplies <br /><br />Urev V   40-150<br /><br />Irev. µa   < 250<br /><br />Idirect max. A   1-30
  • Process Description: Number of masks, pcs.                                                  4<br /><br />Size, mm                                                  0.76x0.76-4x4<br /><br />Substrate: Si/As-doped/ n-type/Thk 460/Res 0.0035 (111)<br /><br />Epi layer:         Si/ P-doped/ n-type/Thk 4.5/Res (0.6-0.8)<br /><br />Isolation:                      p-n junction with field-type oxide<br /><br />Metallization:                                      Al+Mo+Ti-Ni-Ag

Bipolar technology for the manufacture of high-power npn-transistors with Darlington

  • Application, features: UCB = (60-70) V<br /><br />UCE = (60-70) V<br /><br /> Ic= (2,0-12) A<br /><br /> h21E >500
  • Process Description: Epi structure:<br /><br />Substrate:                        Si/ B-doped/ p-type/ Res 0,05/ (111):<br /><br />Thickness of the layer, µm                                                 25-33<br /><br />Resistivity, Ohm/cm                                                            10-18<br /><br />6,7 masks (contact)<br /><br />Base: Phosphorous ion implantation,<br /><br />depth, µm                                                                                   6-8<br /><br />Emitter: boron diffusion,<br /><br />depth, µm                                                                            2,5-5,5<br /><br />p-n junction protection :                                          SiO2, Ta2O5<br /><br />Metallization :                                                                  Al 4, 5 µm<br /><br />Backside:                                                                            Ti-Ni-Ag

Bipolar technology for the manufacture of npn-transistors with the range of collector current: 7,5÷16 A

  • Application, features: UCB = (80-160) V<br /><br />UCE = (30-90) V<br /><br /> Ic= (7,5-16) A<br /><br />h21E >15
  • Process Description: Epi structure<br /><br />Substrate:                       Si/B-doped/ p-type/ Res 0,05/ (111):<br /><br />Thickness of Epi layer, µm                                               25-28<br /><br />Resistivity, Ohm/cm                                                              8-11<br /><br />7 masks (contact)<br /><br />Base:Phosphorous ion implantation, depth, µm       4,5-7,5                                                     <br /><br />Emitter: boron  diffusion,  depth, µm                            1,4-2,5<br /><br />p-n junction protection :                                       SiO2, Ta2,O5<br /><br />Metallization :                                                              Al  4, 0 µm<br /><br />Backside:                                                                         Ti-Ni-Ag

Bipolar technology for the manufacture of voltage regulators of positive and negative polarity, one metallization level

  • Application, features: NPN  Vertical:<br /><br />h 21E =(100-300)<br /><br />UCE >=38V<br /><br />PNP Lateral:<br /><br />h 21E>=20<br /><br />UCE >=38V<br /><br />Capacitor: n+ - Al<br /><br />Resistors in layer:<br /><br />Base; resistor
  • Process Description: Number of masks, pcs.                                                            7-10<br /><br />Mean design rule,µm                                                                  4-5<br /><br />Substrate:                 Si/B-doped/ p-type/Thk 460/Res 10/ (111)<br /><br />Buried layers:                           Si/Sb-doped/ n-type/Thk5/Res25;<br /><br />                                       Si/Boron-doped/ p-type/Thk 1.6/Res510;<br /><br />Epi layer:                            Si/P-doped/ n-type/Thk 13,3/ Res 3.6;<br /><br />Isolation:                                                                          p-n junction<br /><br />p-base depth, µm                                                                  1,8÷2,8<br /><br />N+emitter depth, µm                                                             0,9÷2,2<br /><br />Deep collector, separation and emitter layers have been carried out by method of diffusion<br /><br />Capacitor dielectric:                                        Si oxide or Si nitride<br /><br />Interlayer dielectric:                              medium temperature PSG<br /><br />Metallization:                                                                      Al   1,4 µm<br /><br />Passivation:                                                 low temp. PSG 1,0 µm

40 V, p-n junction isolation “Bp30-40”

  • Application, features: Small-scaleintegrationdigital-analogueIC, VDD< 40 V<br /><br /> <br /><br />NPNtransistor vertical:<br /><br />bn =150 Uce=48 V<br /><br />РNP transistor lateral:<br /><br />bр =65 Uсе=60 V<br /><br />РNP transistorvertical:<br /><br />bр =60 Uсе=60 V<br /><br />Capacitors:emitter-base; collector-base; Ме-n+;<br /><br />Ме1-Ме2.<br /><br />Resistors in layers:<br /><br />Isolation; Base; Resistor.<br /><br />PolySi
  • Process Description: Number of masks, pcs.                                                       8-13<br /><br />Mean design rule,µm                                                              8.0<br /><br />Substrate:            Si/B-doped/ p-type/Thk 460/Res 10/ (111)<br /><br />Buried layers:                Si/Sb-doped/ n-type/Thk 6.0/Res20;<br /><br />                                    Si/B-doped/ p-type/Thk 1.95/Res210 ;<br /><br />Epi layer:                       Si/P-doped/ n-type/Thk 13/ Res 3.5;<br /><br />Isolation:                                                    p-n junction<br /><br />p-base depth, µm                                                                    2.0<br /><br />N+emitter depth, µm                                                               1.7<br /><br />Emitter size, µm                                                                      9*9<br /><br />Distance between transistors, mm                                        4<br /><br />Switching:<br /><br />contacts 1, µm                                                                         3*3<br /><br />space line  Me 1, µm                                                              9.0<br /><br />contacts 2, µm                                                                        4*4<br /><br />space line Me 2, µm                                                            14.0

20 V,p-n junction isolation “Bp30С-20” complementary

  • Application, features: Small and medium-scale integration digital-analogue IC, VDD < 18 V<br /><br /> <br /><br />NPN transistor  vertical:<br /><br />bn=150 Uce=27 V<br /><br />РNP transistor  lateral:<br /><br />bр=30 Uсе=35 V<br /><br />РNP transistor  vertical:<br /><br />bр=45 Uсе=35 V<br /><br />РNP Vertical with isolated collector:<br /><br />bр=80 Uсе=30 V<br /><br />Capacitors:emitter-base; collector base; Ме-n+;<br /><br />Ме1-Ме2.<br /><br />Resistors in layers:<br /><br />Isolation; Base; Resistor
  • Process Description: Number of masks, pcs.                                                     12-14<br /><br />Mean design rule,µm                                                              6.0<br /><br />Substrate:         Si/B-doped/ p-type/ Thk 460/ Res 10/  (111)<br /><br />Buried layers:                Si/Sb-doped/n-type/Thk 6.0/Res  20;<br /><br />                                    Si/ B-doped/p-type/Thk 1.95/Res    210;<br /><br />Epi layer:                       Si/P-doped/ n-type/ Thk 8/ Res     1.5;<br /><br />Isolation:                                                   p-n junction<br /><br />p-base depth, µm                                                                    2.0<br /><br />N+emitter depth, µm                                                               1.7<br /><br />Emitter size, µm                                                                      7*7<br /><br />Distance between transistors, µm                                         4<br /><br />Switching: <br /><br />contacts 1, µm                                                                        3*3<br /><br />space line  Me 1, µm                                                              9.0<br /><br />contacts  2, µm                                                                       4*4<br /><br />space line  Me 2, µm                                                           12.0

0 V, p-n junction isolation “Bp30-20”

  • Application, features: Small and medium-scale integration digital-analogue IC, VDD < 18 V<br /><br /> <br /><br />NPN transistor vertical:<br /><br />bn=150 Uce=28 V<br /><br />РNP transistor lateral:<br /><br />bр=35 Uсе=45 V<br /><br />РNP transistor  vertical:<br /><br />bр=35 Uсе=45 V<br /><br />I2L gate<br /><br />Capacitors:emitter-base; collector-base; Ме-n+;<br /><br />Ме1-Ме2.<br /><br />Resistors in layers:<br /><br />Isolation; Base; Resistor
  • Process Description: Number of masks, pcs.                                                  8-13<br /><br />Mean design rule,µm                                                        6.0<br /><br />Substrate:      Si/B-doped/ p-type/ Thk 460/ Res 10/  (111)<br /><br />Buried layers:           Si/ Sb-doped/ n-type/Thk 6.0/Res 20;<br /><br />                                 Si/ B-doped /p-type/Thk 1.95/Res210;<br /><br />Epi layer:                     Si/ P-doped/ n-type/ Thk 9/ Res 2.0;<br /><br />Isolation:                                                 p-n junction<br /><br />p-base depth, µm                                                              2.2<br /><br />N+emitter depth, µm                                                         1.7<br /><br />Emitter size, µm                                                                9*9<br /><br />Distance between transistors, µm                                    4<br /><br />Switching:  <br /><br />contacts 1, µm                                                                   3*3<br /><br />space line  Me 1, µm                                                         9.0<br /><br />contacts  2, µm                                                                  4*4<br /><br />space line Me 2, µm                                                       12.0

20 V, p-n junction isolation

  • Application, features: Small and medium-scale integration digital-analogue IC, VDD < 18 V<br /><br /> <br /><br />NPN Vertical:<br /><br />bn=150 Uce=28 V<br /><br />РNP Lateral:<br /><br />bр=35 Uсе=45 V<br /><br />РNP Vertical:<br /><br />bр=35 Uсе=45 V<br /><br />I2L gate<br /><br />Capacitors:emitter-base; collector-base; Ме-n+;<br /><br />Ме1-Ме2.<br /><br />Resistors in layers:<br /><br />Isolation; Base; Resistor
  • Process Description: Number of masks, pcs.                                                         13<br /><br />Mean design rule,µm                                                            6.0<br /><br />Substrate:         Si/B-doped/ p-type/ Thk 460/ Res 10/ (111)<br /><br />Buried layers:                  Si/Sb-doped/ n-type/Thk 5/Res 17;<br /><br />                                        Si/B-doped/ p-type/Thk 1.6/Res510;<br /><br />Epi layer:                    Si/P-doped/ N-type/ Thk 10/ Res 1.25;<br /><br />Isolation:                                                                  p-n junction<br /><br />p-base depth, µm                                                                   2.4<br /><br />N+emitter depth, µm                                                              1.7<br /><br />Emitter size, µm                                                                         6<br /><br />Distance between transistors, µm                                         6<br /><br />Switching: <br /><br />contacts 1, µm                                                                            4<br /><br />space line  Me 1, µm                                                           13.0<br /><br />contacts  2, µm                                                                       4*4<br /><br />space line Me 2, µm                                                             12.0

Bipolar technology for the manufacture of transistors, triacs

  • Application, features: IT (on-state) = 2,0 A<br /><br />Ubr = (600-800)V
  • Process Description: Substrate:                                            Si/ P-irradiated / Res 35<br /><br />10 masks (contact, two-side)<br /><br />Base: boron diffusion,<br /><br />depth, µm                                                                             35-45<br /><br />Cathode : phosphorous diffusion,<br /><br />depth, µm                                                                             15-18<br /><br />p-n junction protection:  SiPOS, Si3N4, medium temp. PSG<br /><br />Metallization :                                                               Al 2,0 mm<br /><br />Passivation:                                             low temp. PSG, Si3N4<br /><br />Backside:                                                                           Ti-Ni-Ag

Bipolar technology for the manufacture of npn-transistors with the range of operating voltages: 200-300 V

  • Application, features: UCB = (250-300) V<br /><br />UCE = (200-250) V<br /><br /> Ic= (0,4-0,5) A<br /><br /> h21E >40
  • Process Description: Epi structure<br /><br />Substrate:                       Si/B-doped/ p-type/ Res 0,03/  (111):<br /><br />Thickness of Epi layer, µm                                                40-45<br /><br />Resistivity, Ohm/cm                                                            40-50<br /><br />7 masks (contact)<br /><br />Base:Phosphorous ion implantation, depth, µm           3-5,5                                                        <br /><br />Emitter: boron diffusion<br /><br />collector-base p-n junction protection :                          SiPOS<br /><br />Metallization :                                                                 Al 1,4 µm<br /><br />Backside:                                                             Ti-Ni-Sn-Pb-Sn

5 V, «Isoplanar – 1» “BpI-30-5”

  • Application, features: Small and medium-scale  integration digital-analogue IC, VDD < 5V<br /><br /> <br /><br />NPN transistor vertical:<br /><br />bn =100 Uсе= 8 V<br /><br />PNP transistor lateral:<br /><br />bр =25 Uce=20 V<br /><br /> <br /><br />Resistors in layer: Base
  • Process Description: Number of masks, pcs.                                           15<br /><br />Mean design rule,µm                                            3.0<br /><br />Substrate:         Si/B-doped/ p-type/Thk 460/Res 10/ (111);<br /><br />Buried layers:             Si/Sb-doped/ n-type/Thk 2.5/Res 35;<br /><br />                                Si/ B-doped/ p-type/Thk 1.95/Res210;<br /><br />Epi layer: Si/P-doped/ n-type/Thk 1.5/Res 0.3;<br /><br />Isolation: LOCOS + p+ - guard rings<br /><br />p-base depth, µm                                                0.854<br /><br />N+ emitter depth, µm                                          0.55<br /><br />Emitter size, µm                                                   2*3<br /><br />Distance between transistors, µm                            2                                <br /><br /> Switching:<br /><br />contacts 1, µm                                                       2*3<br /><br />space line Me  1, µm                                            6.5             <br /><br />contacts 2 , µm                                                     4*4<br /><br />space line Me 2, µm                                           10.0

15 V, p-n junction isolation

  • Application, features: Small and medium-scale integration digital-analogue IC, VDD < 18 V<br /><br /> <br /><br />NPN Vertical:<br /><br />bn=150 Uce=28 V<br /><br />РNP Lateral:<br /><br />bр=35 Uсе=45 V<br /><br />РNP Vertical:<br /><br />bр=35 Uсе=45 V<br /><br />Capacitor:Ме-n+emitter<br /><br />Resistors in PolySi layer
  • Process Description: Number of masks, pcs.                                                    10-13<br /><br />Mean design rule,µm                                                             6.0<br /><br />Substrate:          Si/B-doped/ p-type/ Thk 460/ Res 10/ (111)<br /><br />Buried layers:              Si/Sb-doped/ n -type/Thk 6.0/Res 20;<br /><br />                                       Si/B-doped/ p-type/Thk 1.95/Res210;<br /><br />Epi layer:                          Si/ P-doped/ n-type/ Thk 8/ Res 4.5;<br /><br />Isolation:                                                                   p-n junction<br /><br />p-base depth, µm                                                                    2.4<br /><br />N+emitter depth, µm                                                               1.7<br /><br />Emitter size, µm                                                                          6<br /><br />Distance between transistors, µm                                          6<br /><br />Switching: <br /><br />contacts 1, µm                                                                             4<br /><br />space line  Me 1, µm                                                                13

Bipolar technology for high-power npn-transistors manufacturing with the range of operating voltages: 160-300 V

  • Application, features: UCB = (160-300) V<br /><br />UCE = (160-300) V<br /><br /> Ic= (0,1-1,5) A<br /><br /> h21E > 25
  • Process Description: Epi structure:<br /><br />Substrate:                        Si/Sb-doped/ n-type/Res 0,01 (111):<br /><br />Thickness of Epi layer, µm                                                  35,50<br /><br />Resistivity, Ohm/cm                                                                   23<br /><br />7-8 masks (contact)<br /><br />Base: ion implantation, depth, µm                                  2,8-4,6<br /><br />Emitter: diffusion, depth, µm                                             1,4-2,8<br /><br />collector-base p-n junction protection:                             SiPOS<br /><br />Metallization :                                                                 Al     1,4 µm<br /><br />Backside:                                                         Ti-Ni-Ag (Sn-Pb-Sn)<br /><br />Passivation:                                                              low temp. PSG