20 V,p-n junction isolation “Bp30С-20” complementary
20 V,p-n junction isolation “Bp30С-20” complementary
- Application, features: Small and medium-scale integration digital-analogue IC, VDD < 18 V<br /><br /> <br /><br />NPN transistor vertical:<br /><br />bn=150 Uce=27 V<br /><br />РNP transistor lateral:<br /><br />bр=30 Uсе=35 V<br /><br />РNP transistor vertical:<br /><br />bр=45 Uсе=35 V<br /><br />РNP Vertical with isolated collector:<br /><br />bр=80 Uсе=30 V<br /><br />Capacitors:emitter-base; collector base; Ме-n+;<br /><br />Ме1-Ме2.<br /><br />Resistors in layers:<br /><br />Isolation; Base; Resistor
- Process Description: Number of masks, pcs. 12-14<br /><br />Mean design rule,µm 6.0<br /><br />Substrate: Si/B-doped/ p-type/ Thk 460/ Res 10/ (111)<br /><br />Buried layers: Si/Sb-doped/n-type/Thk 6.0/Res 20;<br /><br /> Si/ B-doped/p-type/Thk 1.95/Res 210;<br /><br />Epi layer: Si/P-doped/ n-type/ Thk 8/ Res 1.5;<br /><br />Isolation: p-n junction<br /><br />p-base depth, µm 2.0<br /><br />N+emitter depth, µm 1.7<br /><br />Emitter size, µm 7*7<br /><br />Distance between transistors, µm 4<br /><br />Switching: <br /><br />contacts 1, µm 3*3<br /><br />space line Me 1, µm 9.0<br /><br />contacts 2, µm 4*4<br /><br />space line Me 2, µm 12.0
- Тип карточки товара: Сложная
- Application, features: Small and medium-scale integration digital-analogue IC, VDD < 18 V<br /><br /> <br /><br />NPN transistor vertical:<br /><br />bn=150 Uce=27 V<br /><br />РNP transistor lateral:<br /><br />bр=30 Uсе=35 V<br /><br />РNP transistor vertical:<br /><br />bр=45 Uсе=35 V<br /><br />РNP Vertical with isolated collector:<br /><br />bр=80 Uсе=30 V<br /><br />Capacitors:emitter-base; collector base; Ме-n+;<br /><br />Ме1-Ме2.<br /><br />Resistors in layers:<br /><br />Isolation; Base; Resistor
- Process Description: Number of masks, pcs. 12-14<br /><br />Mean design rule,µm 6.0<br /><br />Substrate: Si/B-doped/ p-type/ Thk 460/ Res 10/ (111)<br /><br />Buried layers: Si/Sb-doped/n-type/Thk 6.0/Res 20;<br /><br /> Si/ B-doped/p-type/Thk 1.95/Res 210;<br /><br />Epi layer: Si/P-doped/ n-type/ Thk 8/ Res 1.5;<br /><br />Isolation: p-n junction<br /><br />p-base depth, µm 2.0<br /><br />N+emitter depth, µm 1.7<br /><br />Emitter size, µm 7*7<br /><br />Distance between transistors, µm 4<br /><br />Switching: <br /><br />contacts 1, µm 3*3<br /><br />space line Me 1, µm 9.0<br /><br />contacts 2, µm 4*4<br /><br />space line Me 2, µm 12.0