20 V,p-n junction isolation “Bp30С-20” complementary

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範圍	意義
Тип карточки товара	Сложная
Application, features	Small and medium-scale integration digital-analogue IC, VDD < 18 V NPN transistor vertical: bn=150 Uce=27 V РNP transistor lateral: bр=30 Uсе=35 V РNP transistor vertical: bр=45 Uсе=35 V РNP Vertical with isolated collector: bр=80 Uсе=30 V Capacitors:emitter-base; collector base; Ме-n+; Ме1-Ме2. Resistors in layers: Isolation; Base; Resistor
Process Description	Number of masks, pcs. 12-14 Mean design rule,µm 6.0 Substrate: Si/B-doped/ p-type/ Thk 460/ Res 10/ (111) Buried layers: Si/Sb-doped/n-type/Thk 6.0/Res 20; Si/ B-doped/p-type/Thk 1.95/Res 210; Epi layer: Si/P-doped/ n-type/ Thk 8/ Res 1.5; Isolation: p-n junction p-base depth, µm 2.0 N+emitter depth, µm 1.7 Emitter size, µm 77 Distance between transistors, µm 4 Switching: contacts 1, µm 33 space line Me 1, µm 9.0 contacts 2, µm 4*4 space line Me 2, µm 12.0

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