• Тип карточки товара: Сложная
• Application, features: Small and medium-scale integration digital-analogue IC, VDD < 18 V<br /><br /> <br /><br />NPN transistor  vertical:<br /><br />bn=150 Uce=27 V<br /><br />РNP transistor  lateral:<br /><br />bр=30 Uсе=35 V<br /><br />РNP transistor  vertical:<br /><br />bр=45 Uсе=35 V<br /><br />РNP Vertical with isolated collector:<br /><br />bр=80 Uсе=30 V<br /><br />Capacitors:emitter-base; collector base; Ме-n+;<br /><br />Ме1-Ме2.<br /><br />Resistors in layers:<br /><br />Isolation; Base; Resistor
• Process Description: Number of masks, pcs.                                                     12-14<br /><br />Mean design rule,µm                                                              6.0<br /><br />Substrate:         Si/B-doped/ p-type/ Thk 460/ Res 10/  (111)<br /><br />Buried layers:                Si/Sb-doped/n-type/Thk 6.0/Res  20;<br /><br />                                    Si/ B-doped/p-type/Thk 1.95/Res    210;<br /><br />Epi layer:                       Si/P-doped/ n-type/ Thk 8/ Res     1.5;<br /><br />Isolation:                                                   p-n junction<br /><br />p-base depth, µm                                                                    2.0<br /><br />N+emitter depth, µm                                                               1.7<br /><br />Emitter size, µm                                                                      7*7<br /><br />Distance between transistors, µm                                         4<br /><br />Switching: <br /><br />contacts 1, µm                                                                        3*3<br /><br />space line  Me 1, µm                                                              9.0<br /><br />contacts  2, µm                                                                       4*4<br /><br />space line  Me 2, µm                                                           12.0