Bipolar technology for the manufacture of high-power npn-transistors with operating voltage of 1500 V
Bipolar technology for the manufacture of high-power npn-transistors with operating voltage of 1500 V
- Application, features: UCE = 1500 V<br /><br /> UCE = (700-800) V<br /><br /> Ic= (5-12) A
- Process Description: Substrate: Si/ P-irradiated /Res 102- 90<br /><br />8 masks (contact):<br /><br />Base: ion implantation depth, µm 20-26<br /><br />Emitter : diffusion, depth, µm 10-15<br /><br />collector-base p-n junction protection : SiPOS<br /><br />Metallization : Al 4, 5 µm<br /><br />Radiation treatment to ensure dynamics<br /><br />Backside matting<br /><br />Backside: Ti-Ni-Ag sputtering
- Тип карточки товара: Сложная
- Application, features: UCE = 1500 V<br /><br /> UCE = (700-800) V<br /><br /> Ic= (5-12) A
- Process Description: Substrate: Si/ P-irradiated /Res 102- 90<br /><br />8 masks (contact):<br /><br />Base: ion implantation depth, µm 20-26<br /><br />Emitter : diffusion, depth, µm 10-15<br /><br />collector-base p-n junction protection : SiPOS<br /><br />Metallization : Al 4, 5 µm<br /><br />Radiation treatment to ensure dynamics<br /><br />Backside matting<br /><br />Backside: Ti-Ni-Ag sputtering