Bipolar technology for the manufacture of high-power npn-transistors with operating voltage of 1500 V

Bipolar technology for the manufacture of high-power npn-transistors with operating voltage of 1500 V

Bipolar technology for the manufacture of high-power npn-transistors with operating voltage of 1500 V
  • Application, features: UCE = 1500 V<br /><br /> UCE = (700-800) V<br /><br /> Ic= (5-12) A
  • Process Description: Substrate:                                    Si/ P-irradiated  /Res 102- 90<br /><br />8 masks (contact):<br /><br />Base: ion implantation depth, µm                                     20-26<br /><br />Emitter : diffusion, depth, µm                                             10-15<br /><br />collector-base p-n junction protection :                          SiPOS<br /><br />Metallization :                                                            Al      4, 5 µm<br /><br />Radiation treatment to ensure dynamics<br /><br />Backside matting<br /><br />Backside:                                                         Ti-Ni-Ag sputtering  
  • Тип карточки товара: Сложная
  • Application, features: UCE = 1500 V<br /><br /> UCE = (700-800) V<br /><br /> Ic= (5-12) A
  • Process Description: Substrate:                                    Si/ P-irradiated  /Res 102- 90<br /><br />8 masks (contact):<br /><br />Base: ion implantation depth, µm                                     20-26<br /><br />Emitter : diffusion, depth, µm                                             10-15<br /><br />collector-base p-n junction protection :                          SiPOS<br /><br />Metallization :                                                            Al      4, 5 µm<br /><br />Radiation treatment to ensure dynamics<br /><br />Backside matting<br /><br />Backside:                                                         Ti-Ni-Ag sputtering