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Bipolar technology for the manufacture of voltage regulators of positive and negative polarity, one metallization level
| 範圍 | 意義 |
|---|---|
| Тип карточки товара | Сложная |
| Application, features | NPN Vertical: h 21E =(100-300) UCE >=38V PNP Lateral: h 21E>=20 UCE >=38V Capacitor: n+ - Al Resistors in layer: Base; resistor |
| Process Description | Number of masks, pcs. 7-10 Mean design rule,µm 4-5 Substrate: Si/B-doped/ p-type/Thk 460/Res 10/ (111) Buried layers: Si/Sb-doped/ n-type/Thk5/Res25; Si/Boron-doped/ p-type/Thk 1.6/Res510; Epi layer: Si/P-doped/ n-type/Thk 13,3/ Res 3.6; Isolation: p-n junction p-base depth, µm 1,8÷2,8 N+emitter depth, µm 0,9÷2,2 Deep collector, separation and emitter layers have been carried out by method of diffusion Capacitor dielectric: Si oxide or Si nitride Interlayer dielectric: medium temperature PSG Metallization: Al 1,4 µm Passivation: low temp. PSG 1,0 µm |
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销售部电话。 (+37517)2123850: (+375 17) 212 15 13, e-mail:sales@integral by
市场销售部：电话。 (+37517)2121810,tepefax: (+375 17) 212 20 31, 电子邮件: market@integral.by
订购特殊用途产品的先决条件是由企业负责人和客户代表（军事代表）签署申请，由适当的印章和签名认证！