Bipolar technology for the manufacture of high-power npn-transistors with Darlington

規格
購買和技術。支持

範圍	意義
Тип карточки товара	Сложная
Application, features	UCB = (60-70) V UCE = (60-70) V Ic= (2,0-12) A h21E >500
Process Description	Epi structure: Substrate: Si/ B-doped/ p-type/ Res 0,05/ (111): Thickness of the layer, µm 25-33 Resistivity, Ohm/cm 10-18 6,7 masks (contact) Base: Phosphorous ion implantation, depth, µm 6-8 Emitter: boron diffusion, depth, µm 2,5-5,5 p-n junction protection : SiO2, Ta2O5 Metallization : Al 4, 5 µm Backside: Ti-Ni-Ag

訂購

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