Bipolar technology for high-power npn-transistors manufacturing with the range of operating voltages: 160-300 V

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範圍	意義
Тип карточки товара	Сложная
Application, features	UCB = (160-300) V UCE = (160-300) V Ic= (0,1-1,5) A h21E > 25
Process Description	Epi structure: Substrate: Si/Sb-doped/ n-type/Res 0,01 (111): Thickness of Epi layer, µm 35,50 Resistivity, Ohm/cm 23 7-8 masks (contact) Base: ion implantation, depth, µm 2,8-4,6 Emitter: diffusion, depth, µm 1,4-2,8 collector-base p-n junction protection: SiPOS Metallization : Al 1,4 µm Backside: Ti-Ni-Ag (Sn-Pb-Sn) Passivation: low temp. PSG

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