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Bipolar technology for the manufacture of npn-transistors with the range of collector current: 7,5÷16 A
Bipolar technology for the manufacture of npn-transistors with the range of collector current: 7,5÷16 A
| 範圍 | 意義 |
|---|---|
| Тип карточки товара | Сложная |
| Application, features | UCB = (80-160) V UCE = (30-90) V Ic= (7,5-16) A h21E >15 |
| Process Description | Epi structure Substrate: Si/B-doped/ p-type/ Res 0,05/ (111): Thickness of Epi layer, µm 25-28 Resistivity, Ohm/cm 8-11 7 masks (contact) Base:Phosphorous ion implantation, depth, µm 4,5-7,5 Emitter: boron diffusion, depth, µm 1,4-2,5 p-n junction protection : SiO2, Ta2,O5 Metallization : Al 4, 0 µm Backside: Ti-Ni-Ag |
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销售部电话。 (+37517)2123850: (+375 17) 212 15 13, e-mail:sales@integral by
市场销售部：电话。 (+37517)2121810,tepefax: (+375 17) 212 20 31, 电子邮件: market@integral.by
订购特殊用途产品的先决条件是由企业负责人和客户代表（军事代表）签署申请，由适当的印章和签名认证！