Bipolar technology for the manufacture of npn-transistors with the range of collector current: 7,5÷16 A
Bipolar technology for the manufacture of npn-transistors with the range of collector current: 7,5÷16 A
- Application, features: UCB = (80-160) V<br /><br />UCE = (30-90) V<br /><br /> Ic= (7,5-16) A<br /><br />h21E >15
- Process Description: Epi structure<br /><br />Substrate: Si/B-doped/ p-type/ Res 0,05/ (111):<br /><br />Thickness of Epi layer, µm 25-28<br /><br />Resistivity, Ohm/cm 8-11<br /><br />7 masks (contact)<br /><br />Base:Phosphorous ion implantation, depth, µm 4,5-7,5 <br /><br />Emitter: boron diffusion, depth, µm 1,4-2,5<br /><br />p-n junction protection : SiO2, Ta2,O5<br /><br />Metallization : Al 4, 0 µm<br /><br />Backside: Ti-Ni-Ag
- Тип карточки товара: Сложная
- Application, features: UCB = (80-160) V<br /><br />UCE = (30-90) V<br /><br /> Ic= (7,5-16) A<br /><br />h21E >15
- Process Description: Epi structure<br /><br />Substrate: Si/B-doped/ p-type/ Res 0,05/ (111):<br /><br />Thickness of Epi layer, µm 25-28<br /><br />Resistivity, Ohm/cm 8-11<br /><br />7 masks (contact)<br /><br />Base:Phosphorous ion implantation, depth, µm 4,5-7,5 <br /><br />Emitter: boron diffusion, depth, µm 1,4-2,5<br /><br />p-n junction protection : SiO2, Ta2,O5<br /><br />Metallization : Al 4, 0 µm<br /><br />Backside: Ti-Ni-Ag