Bipolar technology for the manufacture of npn-transistors with the range of collector current: 7,5÷16 A

Bipolar technology for the manufacture of npn-transistors with the range of collector current: 7,5÷16 A

Bipolar technology for the manufacture of npn-transistors with the range of collector current: 7,5÷16 A
  • Application, features: UCB = (80-160) V<br /><br />UCE = (30-90) V<br /><br /> Ic= (7,5-16) A<br /><br />h21E >15
  • Process Description: Epi structure<br /><br />Substrate:                       Si/B-doped/ p-type/ Res 0,05/ (111):<br /><br />Thickness of Epi layer, µm                                               25-28<br /><br />Resistivity, Ohm/cm                                                              8-11<br /><br />7 masks (contact)<br /><br />Base:Phosphorous ion implantation, depth, µm       4,5-7,5                                                     <br /><br />Emitter: boron  diffusion,  depth, µm                            1,4-2,5<br /><br />p-n junction protection :                                       SiO2, Ta2,O5<br /><br />Metallization :                                                              Al  4, 0 µm<br /><br />Backside:                                                                         Ti-Ni-Ag
  • Тип карточки товара: Сложная
  • Application, features: UCB = (80-160) V<br /><br />UCE = (30-90) V<br /><br /> Ic= (7,5-16) A<br /><br />h21E >15
  • Process Description: Epi structure<br /><br />Substrate:                       Si/B-doped/ p-type/ Res 0,05/ (111):<br /><br />Thickness of Epi layer, µm                                               25-28<br /><br />Resistivity, Ohm/cm                                                              8-11<br /><br />7 masks (contact)<br /><br />Base:Phosphorous ion implantation, depth, µm       4,5-7,5                                                     <br /><br />Emitter: boron  diffusion,  depth, µm                            1,4-2,5<br /><br />p-n junction protection :                                       SiO2, Ta2,O5<br /><br />Metallization :                                                              Al  4, 0 µm<br /><br />Backside:                                                                         Ti-Ni-Ag