0 V, p-n junction isolation “Bp30-20”

規格
購買和技術。支持

範圍	意義
Тип карточки товара	Сложная
Application, features	Small and medium-scale integration digital-analogue IC, VDD < 18 V NPN transistor vertical: bn=150 Uce=28 V РNP transistor lateral: bр=35 Uсе=45 V РNP transistor vertical: bр=35 Uсе=45 V I2L gate Capacitors:emitter-base; collector-base; Ме-n+; Ме1-Ме2. Resistors in layers: Isolation; Base; Resistor
Process Description	Number of masks, pcs. 8-13 Mean design rule,µm 6.0 Substrate: Si/B-doped/ p-type/ Thk 460/ Res 10/ (111) Buried layers: Si/ Sb-doped/ n-type/Thk 6.0/Res 20; Si/ B-doped /p-type/Thk 1.95/Res210; Epi layer: Si/ P-doped/ n-type/ Thk 9/ Res 2.0; Isolation: p-n junction p-base depth, µm 2.2 N+emitter depth, µm 1.7 Emitter size, µm 99 Distance between transistors, µm 4 Switching: contacts 1, µm 33 space line Me 1, µm 9.0 contacts 2, µm 4*4 space line Me 2, µm 12.0

訂購

小批量产品供应订单的订单，成本和履行条款由消费者与ojsc"INTEGRAL"的营销和销售服务达成一致-控股"INTEGRAL"的管理公司
销售部电话。 (+37517)2123850: (+375 17) 212 15 13, e-mail:sales@integral by
市场销售部：电话。 (+37517)2121810,tepefax: (+375 17) 212 20 31, 电子邮件: market@integral.by
订购特殊用途产品的先决条件是由企业负责人和客户代表（军事代表）签署申请，由适当的印章和签名认证！