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0 V, p-n junction isolation “Bp30-20”

範圍 意義
Тип карточки товара Сложная
Application, features Small and medium-scale integration digital-analogue IC, VDD < 18 V

 

NPN transistor vertical:

bn=150 Uce=28 V

РNP transistor lateral:

bр=35 Uсе=45 V

РNP transistor  vertical:

bр=35 Uсе=45 V

I2L gate

Capacitors:emitter-base; collector-base; Ме-n+;

Ме1-Ме2.

Resistors in layers:

Isolation; Base; Resistor
Process Description Number of masks, pcs.                                                  8-13

Mean design rule,µm                                                        6.0

Substrate:      Si/B-doped/ p-type/ Thk 460/ Res 10/  (111)

Buried layers:           Si/ Sb-doped/ n-type/Thk 6.0/Res 20;

                                 Si/ B-doped /p-type/Thk 1.95/Res210;

Epi layer:                     Si/ P-doped/ n-type/ Thk 9/ Res 2.0;

Isolation:                                                 p-n junction

p-base depth, µm                                                              2.2

N+emitter depth, µm                                                         1.7

Emitter size, µm                                                                9*9

Distance between transistors, µm                                    4

Switching:  

contacts 1, µm                                                                   3*3

space line  Me 1, µm                                                         9.0

contacts  2, µm                                                                  4*4

space line Me 2, µm                                                       12.0
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