20 V, p-n junction isolation
20 V, p-n junction isolation
- Application, features: Small and medium-scale integration digital-analogue IC, VDD < 18 V<br /><br /> <br /><br />NPN Vertical:<br /><br />bn=150 Uce=28 V<br /><br />РNP Lateral:<br /><br />bр=35 Uсе=45 V<br /><br />РNP Vertical:<br /><br />bр=35 Uсе=45 V<br /><br />I2L gate<br /><br />Capacitors:emitter-base; collector-base; Ме-n+;<br /><br />Ме1-Ме2.<br /><br />Resistors in layers:<br /><br />Isolation; Base; Resistor
- Process Description: Number of masks, pcs. 13<br /><br />Mean design rule,µm 6.0<br /><br />Substrate: Si/B-doped/ p-type/ Thk 460/ Res 10/ (111)<br /><br />Buried layers: Si/Sb-doped/ n-type/Thk 5/Res 17;<br /><br /> Si/B-doped/ p-type/Thk 1.6/Res510;<br /><br />Epi layer: Si/P-doped/ N-type/ Thk 10/ Res 1.25;<br /><br />Isolation: p-n junction<br /><br />p-base depth, µm 2.4<br /><br />N+emitter depth, µm 1.7<br /><br />Emitter size, µm 6<br /><br />Distance between transistors, µm 6<br /><br />Switching: <br /><br />contacts 1, µm 4<br /><br />space line Me 1, µm 13.0<br /><br />contacts 2, µm 4*4<br /><br />space line Me 2, µm 12.0
- Тип карточки товара: Сложная
- Application, features: Small and medium-scale integration digital-analogue IC, VDD < 18 V<br /><br /> <br /><br />NPN Vertical:<br /><br />bn=150 Uce=28 V<br /><br />РNP Lateral:<br /><br />bр=35 Uсе=45 V<br /><br />РNP Vertical:<br /><br />bр=35 Uсе=45 V<br /><br />I2L gate<br /><br />Capacitors:emitter-base; collector-base; Ме-n+;<br /><br />Ме1-Ме2.<br /><br />Resistors in layers:<br /><br />Isolation; Base; Resistor
- Process Description: Number of masks, pcs. 13<br /><br />Mean design rule,µm 6.0<br /><br />Substrate: Si/B-doped/ p-type/ Thk 460/ Res 10/ (111)<br /><br />Buried layers: Si/Sb-doped/ n-type/Thk 5/Res 17;<br /><br /> Si/B-doped/ p-type/Thk 1.6/Res510;<br /><br />Epi layer: Si/P-doped/ N-type/ Thk 10/ Res 1.25;<br /><br />Isolation: p-n junction<br /><br />p-base depth, µm 2.4<br /><br />N+emitter depth, µm 1.7<br /><br />Emitter size, µm 6<br /><br />Distance between transistors, µm 6<br /><br />Switching: <br /><br />contacts 1, µm 4<br /><br />space line Me 1, µm 13.0<br /><br />contacts 2, µm 4*4<br /><br />space line Me 2, µm 12.0