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20 V, p-n junction isolation

範圍 意義
Тип карточки товара Сложная
Application, features Small and medium-scale integration digital-analogue IC, VDD < 18 V

 

NPN Vertical:

bn=150 Uce=28 V

РNP Lateral:

bр=35 Uсе=45 V

РNP Vertical:

bр=35 Uсе=45 V

I2L gate

Capacitors:emitter-base; collector-base; Ме-n+;

Ме1-Ме2.

Resistors in layers:

Isolation; Base; Resistor
Process Description Number of masks, pcs.                                                         13

Mean design rule,µm                                                            6.0

Substrate:         Si/B-doped/ p-type/ Thk 460/ Res 10/ (111)

Buried layers:                  Si/Sb-doped/ n-type/Thk 5/Res 17;

                                        Si/B-doped/ p-type/Thk 1.6/Res510;

Epi layer:                    Si/P-doped/ N-type/ Thk 10/ Res 1.25;

Isolation:                                                                  p-n junction

p-base depth, µm                                                                   2.4

N+emitter depth, µm                                                              1.7

Emitter size, µm                                                                         6

Distance between transistors, µm                                         6

Switching: 

contacts 1, µm                                                                            4

space line  Me 1, µm                                                           13.0

contacts  2, µm                                                                       4*4

space line Me 2, µm                                                             12.0
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