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Bipolar technology for the manufacture of high-power npn-transistors with Darlington

Bipolar technology for the manufacture of high-power npn-transistors with Darlington

範圍 意義
Тип карточки товара Сложная
Application, features UCB = (300-350) V

UCE = (150-350) V

 Ic= (5-15) A

 h21E >100
Process Description Epi structure:

Substrate:                         Si/ Sb-doped/ n-type/Res 0,01 (111):

Thickness of Epi layer, µm                                                   27-38

Resistivity, Ohm/cm                                                                  8-21

6-7 masks (contact)

Base: ion implantation,

depth, µm                                                                                     6-8

Emitter: diffusion,

depth, µm                                                                              2,5-5,5

collector-base p-n junction protection :                            SiPOS

Metallization :                                                                   Al 4, 5 µm

Backside:                                                                            Ti-Ni-Ag

Passivation:                                                           Low temp. PSG
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