Bipolar technology for the manufacture of high-power npn-transistors with Darlington

規格
購買和技術。支持

範圍	意義
Тип карточки товара	Сложная
Application, features	UCB = (300-350) V UCE = (150-350) V Ic= (5-15) A h21E >100
Process Description	Epi structure: Substrate: Si/ Sb-doped/ n-type/Res 0,01 (111): Thickness of Epi layer, µm 27-38 Resistivity, Ohm/cm 8-21 6-7 masks (contact) Base: ion implantation, depth, µm 6-8 Emitter: diffusion, depth, µm 2,5-5,5 collector-base p-n junction protection : SiPOS Metallization : Al 4, 5 µm Backside: Ti-Ni-Ag Passivation: Low temp. PSG

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