Bipolar technology for the manufacture of npn-transistors with the range of operating voltages: 200-300 V

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範圍	意義
Тип карточки товара	Сложная
Application, features	UCB = (250-300) V UCE = (200-250) V Ic= (0,4-0,5) A h21E >40
Process Description	Epi structure Substrate: Si/B-doped/ p-type/ Res 0,03/ (111): Thickness of Epi layer, µm 40-45 Resistivity, Ohm/cm 40-50 7 masks (contact) Base:Phosphorous ion implantation, depth, µm 3-5,5 Emitter: boron diffusion collector-base p-n junction protection : SiPOS Metallization : Al 1,4 µm Backside: Ti-Ni-Sn-Pb-Sn

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