Bipolar technology for the manufacture of positive and negative polarity voltage regulators, two metallization levels

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範圍	意義
Тип карточки товара	Сложная
Application, features	NPN Vertical: h 21E =(80-200) UCE >=18 V PNP Lateral: h 21E>=40 UCE >=20V Capacitor: n+ - Al Resistors in layer: Base; resistor
Process Description	Number of masks, pcs. 11-13 Mean design rule,µm 4-5 Substrate: Si/B-doped/ p-type/Thk 460/Res 10/ (111) Buried layers: Si/Sb-doped/ n-type/Thk5/Res17; Si/B-doped/ p-type/Thk 1.6/Res510; Epi layer: Si/P-doped/ n-type/Thk 10/ Res 1,25; Isolation: p-n junction Deep collector, separation and emitter layers have been carried out by method of diffusion. Base, resistor layers – by method of ion implantation Capacitor dielectric: Si oxide or Si nitride p-base depth, µm 1,8÷2,8 N+emitter depth, µm 0,9÷2,2 The first interlayer dielectric: medium temperature PSG+ Si3N4 The second interlayer dielectric: low temperature PSG The first metallization level AlSiCuTi 0,55 µm The second metallization level AlSi, Al 1,4 µm Passivation: low temp. PSG 1,0 µm

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