Shottky diodes with Mo barrier
Shottky diodes with Mo barrier
- Application, features: Fast silicon Shottky diodes for switched mode power supplies <br /><br />Urev V 40-150<br /><br />Irev. µa < 250<br /><br />Idirect max. A 1-30
- Process Description: Number of masks, pcs. 4<br /><br />Size, mm 0.76x0.76-4x4<br /><br />Substrate: Si/As-doped/ n-type/Thk 460/Res 0.0035 (111)<br /><br />Epi layer: Si/ P-doped/ n-type/Thk 4.5/Res (0.6-0.8)<br /><br />Isolation: p-n junction with field-type oxide<br /><br />Metallization: Al+Mo+Ti-Ni-Ag
- Тип карточки товара: Сложная
- Application, features: Fast silicon Shottky diodes for switched mode power supplies <br /><br />Urev V 40-150<br /><br />Irev. µa < 250<br /><br />Idirect max. A 1-30
- Process Description: Number of masks, pcs. 4<br /><br />Size, mm 0.76x0.76-4x4<br /><br />Substrate: Si/As-doped/ n-type/Thk 460/Res 0.0035 (111)<br /><br />Epi layer: Si/ P-doped/ n-type/Thk 4.5/Res (0.6-0.8)<br /><br />Isolation: p-n junction with field-type oxide<br /><br />Metallization: Al+Mo+Ti-Ni-Ag