Bipolar technology for the manufacture of transistors, triacs

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購買和技術。支持

範圍	意義
Тип карточки товара	Сложная
Application, features	IT (on-state) = 2,0 A Ubr = (600-800)V
Process Description	Substrate: Si/ P-irradiated / Res 35 10 masks (contact, two-side) Base: boron diffusion, depth, µm 35-45 Cathode : phosphorous diffusion, depth, µm 15-18 p-n junction protection: SiPOS, Si3N4, medium temp. PSG Metallization : Al 2,0 mm Passivation: low temp. PSG, Si3N4 Backside: Ti-Ni-Ag

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