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Bipolar technology for the manufacture of transistors, triacs

Bipolar technology for the manufacture of transistors, triacs

範圍 意義
Тип карточки товара Сложная
Application, features IT (on-state) = 2,0 A

Ubr = (600-800)V
Process Description Substrate:                                            Si/ P-irradiated / Res 35

10 masks (contact, two-side)

Base: boron diffusion,

depth, µm                                                                             35-45

Cathode : phosphorous diffusion,

depth, µm                                                                             15-18

p-n junction protection:  SiPOS, Si3N4, medium temp. PSG

Metallization :                                                               Al 2,0 mm

Passivation:                                             low temp. PSG, Si3N4

Backside:                                                                           Ti-Ni-Ag
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