Bipolar technology for the manufacture of high-power npn-transistors with the range of operating voltages: 300-700 V

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範圍	意義
Тип карточки товара	Сложная
Application, features	UCB = (300-700) V UCE = (300-400) V Ic= (0,5-8,0) A h21E =(8-40)
Process Description	Epi structure Substrate: Si/ Sb-doped/ n-type/Res 0,01 (111): Thickness of Epi layer, µm 50-80 Resistivity, Ohm/cm 40-50 7-8 masks (contact) Base: ion implantation, depth, µm 2,8-4,6 Emitter: diffusion, depth, µm 1,4-2,8 collector-base p-n junction protection: SiPOS Metallization : Al 1,4 ; 4, 5 µm Backside: Ti-Ni-Ag Passivation: Low temp. PSG

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