40 V, p-n junction isolation “Bp30-40”

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範圍	意義
Тип карточки товара	Сложная
Application, features	Small-scaleintegrationdigital-analogueIC, VDD< 40 V NPNtransistor vertical: bn =150 Uce=48 V РNP transistor lateral: bр =65 Uсе=60 V РNP transistorvertical: bр =60 Uсе=60 V Capacitors:emitter-base; collector-base; Ме-n+; Ме1-Ме2. Resistors in layers: Isolation; Base; Resistor. PolySi
Process Description	Number of masks, pcs. 8-13 Mean design rule,µm 8.0 Substrate: Si/B-doped/ p-type/Thk 460/Res 10/ (111) Buried layers: Si/Sb-doped/ n-type/Thk 6.0/Res20; Si/B-doped/ p-type/Thk 1.95/Res210 ; Epi layer: Si/P-doped/ n-type/Thk 13/ Res 3.5; Isolation: p-n junction p-base depth, µm 2.0 N+emitter depth, µm 1.7 Emitter size, µm 99 Distance between transistors, mm 4 Switching: contacts 1, µm 33 space line Me 1, µm 9.0 contacts 2, µm 4*4 space line Me 2, µm 14.0

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