15 V, p-n junction isolation

規格
購買和技術。支持

範圍	意義
Тип карточки товара	Сложная
Application, features	Small and medium-scale integration digital-analogue IC, VDD < 18 V NPN Vertical: bn=150 Uce=28 V РNP Lateral: bр=35 Uсе=45 V РNP Vertical: bр=35 Uсе=45 V Capacitor:Ме-n+emitter Resistors in PolySi layer
Process Description	Number of masks, pcs. 10-13 Mean design rule,µm 6.0 Substrate: Si/B-doped/ p-type/ Thk 460/ Res 10/ (111) Buried layers: Si/Sb-doped/ n -type/Thk 6.0/Res 20; Si/B-doped/ p-type/Thk 1.95/Res210; Epi layer: Si/ P-doped/ n-type/ Thk 8/ Res 4.5; Isolation: p-n junction p-base depth, µm 2.4 N+emitter depth, µm 1.7 Emitter size, µm 6 Distance between transistors, µm 6 Switching: contacts 1, µm 4 space line Me 1, µm 13

訂購

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