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5 V, «Isoplanar – 1» “BpI-30-5”

範圍 意義
Тип карточки товара Сложная
Application, features Small and medium-scale  integration digital-analogue IC, VDD < 5V

 

NPN transistor vertical:

bn =100 Uсе= 8 V

PNP transistor lateral:

bр =25 Uce=20 V

 

Resistors in layer: Base
Process Description Number of masks, pcs.                                           15

Mean design rule,µm                                            3.0

Substrate:         Si/B-doped/ p-type/Thk 460/Res 10/ (111);

Buried layers:             Si/Sb-doped/ n-type/Thk 2.5/Res 35;

                                Si/ B-doped/ p-type/Thk 1.95/Res210;

Epi layer: Si/P-doped/ n-type/Thk 1.5/Res 0.3;

Isolation: LOCOS + p+ - guard rings

p-base depth, µm                                                0.854

N+ emitter depth, µm                                          0.55

Emitter size, µm                                                   2*3

Distance between transistors, µm                            2                                

 Switching:

contacts 1, µm                                                       2*3

space line Me  1, µm                                            6.5             

contacts 2 , µm                                                     4*4

space line Me 2, µm                                           10.0
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