5 V, «Isoplanar – 1» “BpI-30-5”
5 V, «Isoplanar – 1» “BpI-30-5”
- Application, features: Small and medium-scale integration digital-analogue IC, VDD < 5V<br /><br /> <br /><br />NPN transistor vertical:<br /><br />bn =100 Uсе= 8 V<br /><br />PNP transistor lateral:<br /><br />bр =25 Uce=20 V<br /><br /> <br /><br />Resistors in layer: Base
- Process Description: Number of masks, pcs. 15<br /><br />Mean design rule,µm 3.0<br /><br />Substrate: Si/B-doped/ p-type/Thk 460/Res 10/ (111);<br /><br />Buried layers: Si/Sb-doped/ n-type/Thk 2.5/Res 35;<br /><br /> Si/ B-doped/ p-type/Thk 1.95/Res210;<br /><br />Epi layer: Si/P-doped/ n-type/Thk 1.5/Res 0.3;<br /><br />Isolation: LOCOS + p+ - guard rings<br /><br />p-base depth, µm 0.854<br /><br />N+ emitter depth, µm 0.55<br /><br />Emitter size, µm 2*3<br /><br />Distance between transistors, µm 2 <br /><br /> Switching:<br /><br />contacts 1, µm 2*3<br /><br />space line Me 1, µm 6.5 <br /><br />contacts 2 , µm 4*4<br /><br />space line Me 2, µm 10.0
- Тип карточки товара: Сложная
- Application, features: Small and medium-scale integration digital-analogue IC, VDD < 5V<br /><br /> <br /><br />NPN transistor vertical:<br /><br />bn =100 Uсе= 8 V<br /><br />PNP transistor lateral:<br /><br />bр =25 Uce=20 V<br /><br /> <br /><br />Resistors in layer: Base
- Process Description: Number of masks, pcs. 15<br /><br />Mean design rule,µm 3.0<br /><br />Substrate: Si/B-doped/ p-type/Thk 460/Res 10/ (111);<br /><br />Buried layers: Si/Sb-doped/ n-type/Thk 2.5/Res 35;<br /><br /> Si/ B-doped/ p-type/Thk 1.95/Res210;<br /><br />Epi layer: Si/P-doped/ n-type/Thk 1.5/Res 0.3;<br /><br />Isolation: LOCOS + p+ - guard rings<br /><br />p-base depth, µm 0.854<br /><br />N+ emitter depth, µm 0.55<br /><br />Emitter size, µm 2*3<br /><br />Distance between transistors, µm 2 <br /><br /> Switching:<br /><br />contacts 1, µm 2*3<br /><br />space line Me 1, µm 6.5 <br /><br />contacts 2 , µm 4*4<br /><br />space line Me 2, µm 10.0