Bipolar technology for the manufacture of high-power npn-transistors with the range of operating voltages: 300-700 V

Bipolar technology for the manufacture of high-power npn-transistors with the range of operating voltages: 300-700 V

Bipolar technology for the manufacture of high-power npn-transistors with the range of operating voltages: 300-700 V
  • Application, features: UCB = (300-700) V<br /><br />UCE = (300-400) V<br /><br /> Ic= (0,5-8,0) A<br /><br /> h21E =(8-40)
  • Process Description: Epi structure<br /><br />Substrate:                        Si/ Sb-doped/ n-type/Res 0,01 (111):<br /><br />Thickness of Epi layer, µm                                                 50-80<br /><br />Resistivity, Ohm/cm                                                             40-50<br /><br />7-8 masks (contact)<br /><br />Base: ion implantation,<br /><br />depth, µm                                                                             2,8-4,6<br /><br />Emitter: diffusion,<br /><br />depth, µm                                                                             1,4-2,8<br /><br />collector-base p-n junction protection:                            SiPOS<br /><br />Metallization :                                                       Al   1,4 ; 4, 5 µm<br /><br />Backside:                                                                           Ti-Ni-Ag<br /><br />Passivation:                                                         Low temp. PSG
  • Тип карточки товара: Сложная
  • Application, features: UCB = (300-700) V<br /><br />UCE = (300-400) V<br /><br /> Ic= (0,5-8,0) A<br /><br /> h21E =(8-40)
  • Process Description: Epi structure<br /><br />Substrate:                        Si/ Sb-doped/ n-type/Res 0,01 (111):<br /><br />Thickness of Epi layer, µm                                                 50-80<br /><br />Resistivity, Ohm/cm                                                             40-50<br /><br />7-8 masks (contact)<br /><br />Base: ion implantation,<br /><br />depth, µm                                                                             2,8-4,6<br /><br />Emitter: diffusion,<br /><br />depth, µm                                                                             1,4-2,8<br /><br />collector-base p-n junction protection:                            SiPOS<br /><br />Metallization :                                                       Al   1,4 ; 4, 5 µm<br /><br />Backside:                                                                           Ti-Ni-Ag<br /><br />Passivation:                                                         Low temp. PSG