Bipolar technology for the manufacture of high-power npn-transistors with Darlington

Bipolar technology for the manufacture of high-power npn-transistors with Darlington

Bipolar technology for the manufacture of high-power npn-transistors with Darlington
  • Application, features: UCB = (60-70) V<br /><br />UCE = (60-70) V<br /><br /> Ic= (2,0-12) A<br /><br /> h21E >500
  • Process Description: Epi structure:<br /><br />Substrate:                        Si/ B-doped/ p-type/ Res 0,05/ (111):<br /><br />Thickness of the layer, µm                                                 25-33<br /><br />Resistivity, Ohm/cm                                                            10-18<br /><br />6,7 masks (contact)<br /><br />Base: Phosphorous ion implantation,<br /><br />depth, µm                                                                                   6-8<br /><br />Emitter: boron diffusion,<br /><br />depth, µm                                                                            2,5-5,5<br /><br />p-n junction protection :                                          SiO2, Ta2O5<br /><br />Metallization :                                                                  Al 4, 5 µm<br /><br />Backside:                                                                            Ti-Ni-Ag
  • Тип карточки товара: Сложная
  • Application, features: UCB = (60-70) V<br /><br />UCE = (60-70) V<br /><br /> Ic= (2,0-12) A<br /><br /> h21E >500
  • Process Description: Epi structure:<br /><br />Substrate:                        Si/ B-doped/ p-type/ Res 0,05/ (111):<br /><br />Thickness of the layer, µm                                                 25-33<br /><br />Resistivity, Ohm/cm                                                            10-18<br /><br />6,7 masks (contact)<br /><br />Base: Phosphorous ion implantation,<br /><br />depth, µm                                                                                   6-8<br /><br />Emitter: boron diffusion,<br /><br />depth, µm                                                                            2,5-5,5<br /><br />p-n junction protection :                                          SiO2, Ta2O5<br /><br />Metallization :                                                                  Al 4, 5 µm<br /><br />Backside:                                                                            Ti-Ni-Ag