5 V, «Isoplanar – 1» “BpI-30-5”

規格
購買和技術。支持

範圍	意義
Тип карточки товара	Сложная
Application, features	Small and medium-scale integration digital-analogue IC, VDD < 5V NPN transistor vertical: bn =100 Uсе= 8 V PNP transistor lateral: bр =25 Uce=20 V Resistors in layer: Base
Process Description	Number of masks, pcs. 15 Mean design rule,µm 3.0 Substrate: Si/B-doped/ p-type/Thk 460/Res 10/ (111); Buried layers: Si/Sb-doped/ n-type/Thk 2.5/Res 35; Si/ B-doped/ p-type/Thk 1.95/Res210; Epi layer: Si/P-doped/ n-type/Thk 1.5/Res 0.3; Isolation: LOCOS + p+ - guard rings p-base depth, µm 0.854 N+ emitter depth, µm 0.55 Emitter size, µm 23 Distance between transistors, µm 2 Switching: contacts 1, µm 23 space line Me 1, µm 6.5 contacts 2 , µm 4*4 space line Me 2, µm 10.0

訂購

小批量产品供应订单的订单，成本和履行条款由消费者与ojsc"INTEGRAL"的营销和销售服务达成一致-控股"INTEGRAL"的管理公司
销售部电话。 (+37517)2123850: (+375 17) 212 15 13, e-mail:sales@integral by
市场销售部：电话。 (+37517)2121810,tepefax: (+375 17) 212 20 31, 电子邮件: market@integral.by
订购特殊用途产品的先决条件是由企业负责人和客户代表（军事代表）签署申请，由适当的印章和签名认证！