5 V, «Isoplanar – 1» “BpI-30-5”

5 V, «Isoplanar – 1» “BpI-30-5”

5 V, «Isoplanar – 1» “BpI-30-5”
  • Application, features: Small and medium-scale  integration digital-analogue IC, VDD < 5V<br /><br /> <br /><br />NPN transistor vertical:<br /><br />bn =100 Uсе= 8 V<br /><br />PNP transistor lateral:<br /><br />bр =25 Uce=20 V<br /><br /> <br /><br />Resistors in layer: Base
  • Process Description: Number of masks, pcs.                                           15<br /><br />Mean design rule,µm                                            3.0<br /><br />Substrate:         Si/B-doped/ p-type/Thk 460/Res 10/ (111);<br /><br />Buried layers:             Si/Sb-doped/ n-type/Thk 2.5/Res 35;<br /><br />                                Si/ B-doped/ p-type/Thk 1.95/Res210;<br /><br />Epi layer: Si/P-doped/ n-type/Thk 1.5/Res 0.3;<br /><br />Isolation: LOCOS + p+ - guard rings<br /><br />p-base depth, µm                                                0.854<br /><br />N+ emitter depth, µm                                          0.55<br /><br />Emitter size, µm                                                   2*3<br /><br />Distance between transistors, µm                            2                                <br /><br /> Switching:<br /><br />contacts 1, µm                                                       2*3<br /><br />space line Me  1, µm                                            6.5             <br /><br />contacts 2 , µm                                                     4*4<br /><br />space line Me 2, µm                                           10.0
  • Тип карточки товара: Сложная
  • Application, features: Small and medium-scale  integration digital-analogue IC, VDD < 5V<br /><br /> <br /><br />NPN transistor vertical:<br /><br />bn =100 Uсе= 8 V<br /><br />PNP transistor lateral:<br /><br />bр =25 Uce=20 V<br /><br /> <br /><br />Resistors in layer: Base
  • Process Description: Number of masks, pcs.                                           15<br /><br />Mean design rule,µm                                            3.0<br /><br />Substrate:         Si/B-doped/ p-type/Thk 460/Res 10/ (111);<br /><br />Buried layers:             Si/Sb-doped/ n-type/Thk 2.5/Res 35;<br /><br />                                Si/ B-doped/ p-type/Thk 1.95/Res210;<br /><br />Epi layer: Si/P-doped/ n-type/Thk 1.5/Res 0.3;<br /><br />Isolation: LOCOS + p+ - guard rings<br /><br />p-base depth, µm                                                0.854<br /><br />N+ emitter depth, µm                                          0.55<br /><br />Emitter size, µm                                                   2*3<br /><br />Distance between transistors, µm                            2                                <br /><br /> Switching:<br /><br />contacts 1, µm                                                       2*3<br /><br />space line Me  1, µm                                            6.5             <br /><br />contacts 2 , µm                                                     4*4<br /><br />space line Me 2, µm                                           10.0