40 V, p-n junction isolation “Bp30-40”

40 V, p-n junction isolation “Bp30-40”

40 V, p-n junction isolation “Bp30-40”
  • Application, features: Small-scaleintegrationdigital-analogueIC, VDD< 40 V<br /><br /> <br /><br />NPNtransistor vertical:<br /><br />bn =150 Uce=48 V<br /><br />РNP transistor lateral:<br /><br />bр =65 Uсе=60 V<br /><br />РNP transistorvertical:<br /><br />bр =60 Uсе=60 V<br /><br />Capacitors:emitter-base; collector-base; Ме-n+;<br /><br />Ме1-Ме2.<br /><br />Resistors in layers:<br /><br />Isolation; Base; Resistor.<br /><br />PolySi
  • Process Description: Number of masks, pcs.                                                       8-13<br /><br />Mean design rule,µm                                                              8.0<br /><br />Substrate:            Si/B-doped/ p-type/Thk 460/Res 10/ (111)<br /><br />Buried layers:                Si/Sb-doped/ n-type/Thk 6.0/Res20;<br /><br />                                    Si/B-doped/ p-type/Thk 1.95/Res210 ;<br /><br />Epi layer:                       Si/P-doped/ n-type/Thk 13/ Res 3.5;<br /><br />Isolation:                                                    p-n junction<br /><br />p-base depth, µm                                                                    2.0<br /><br />N+emitter depth, µm                                                               1.7<br /><br />Emitter size, µm                                                                      9*9<br /><br />Distance between transistors, mm                                        4<br /><br />Switching:<br /><br />contacts 1, µm                                                                         3*3<br /><br />space line  Me 1, µm                                                              9.0<br /><br />contacts 2, µm                                                                        4*4<br /><br />space line Me 2, µm                                                            14.0
  • Тип карточки товара: Сложная
  • Application, features: Small-scaleintegrationdigital-analogueIC, VDD< 40 V<br /><br /> <br /><br />NPNtransistor vertical:<br /><br />bn =150 Uce=48 V<br /><br />РNP transistor lateral:<br /><br />bр =65 Uсе=60 V<br /><br />РNP transistorvertical:<br /><br />bр =60 Uсе=60 V<br /><br />Capacitors:emitter-base; collector-base; Ме-n+;<br /><br />Ме1-Ме2.<br /><br />Resistors in layers:<br /><br />Isolation; Base; Resistor.<br /><br />PolySi
  • Process Description: Number of masks, pcs.                                                       8-13<br /><br />Mean design rule,µm                                                              8.0<br /><br />Substrate:            Si/B-doped/ p-type/Thk 460/Res 10/ (111)<br /><br />Buried layers:                Si/Sb-doped/ n-type/Thk 6.0/Res20;<br /><br />                                    Si/B-doped/ p-type/Thk 1.95/Res210 ;<br /><br />Epi layer:                       Si/P-doped/ n-type/Thk 13/ Res 3.5;<br /><br />Isolation:                                                    p-n junction<br /><br />p-base depth, µm                                                                    2.0<br /><br />N+emitter depth, µm                                                               1.7<br /><br />Emitter size, µm                                                                      9*9<br /><br />Distance between transistors, mm                                        4<br /><br />Switching:<br /><br />contacts 1, µm                                                                         3*3<br /><br />space line  Me 1, µm                                                              9.0<br /><br />contacts 2, µm                                                                        4*4<br /><br />space line Me 2, µm                                                            14.0