15 V, p-n junction isolation

15 V, p-n junction isolation

15 V, p-n junction isolation
  • Application, features: Small and medium-scale integration digital-analogue IC, VDD < 18 V<br /><br /> <br /><br />NPN Vertical:<br /><br />bn=150 Uce=28 V<br /><br />РNP Lateral:<br /><br />bр=35 Uсе=45 V<br /><br />РNP Vertical:<br /><br />bр=35 Uсе=45 V<br /><br />Capacitor:Ме-n+emitter<br /><br />Resistors in PolySi layer
  • Process Description: Number of masks, pcs.                                                    10-13<br /><br />Mean design rule,µm                                                             6.0<br /><br />Substrate:          Si/B-doped/ p-type/ Thk 460/ Res 10/ (111)<br /><br />Buried layers:              Si/Sb-doped/ n -type/Thk 6.0/Res 20;<br /><br />                                       Si/B-doped/ p-type/Thk 1.95/Res210;<br /><br />Epi layer:                          Si/ P-doped/ n-type/ Thk 8/ Res 4.5;<br /><br />Isolation:                                                                   p-n junction<br /><br />p-base depth, µm                                                                    2.4<br /><br />N+emitter depth, µm                                                               1.7<br /><br />Emitter size, µm                                                                          6<br /><br />Distance between transistors, µm                                          6<br /><br />Switching: <br /><br />contacts 1, µm                                                                             4<br /><br />space line  Me 1, µm                                                                13
  • Тип карточки товара: Сложная
  • Application, features: Small and medium-scale integration digital-analogue IC, VDD < 18 V<br /><br /> <br /><br />NPN Vertical:<br /><br />bn=150 Uce=28 V<br /><br />РNP Lateral:<br /><br />bр=35 Uсе=45 V<br /><br />РNP Vertical:<br /><br />bр=35 Uсе=45 V<br /><br />Capacitor:Ме-n+emitter<br /><br />Resistors in PolySi layer
  • Process Description: Number of masks, pcs.                                                    10-13<br /><br />Mean design rule,µm                                                             6.0<br /><br />Substrate:          Si/B-doped/ p-type/ Thk 460/ Res 10/ (111)<br /><br />Buried layers:              Si/Sb-doped/ n -type/Thk 6.0/Res 20;<br /><br />                                       Si/B-doped/ p-type/Thk 1.95/Res210;<br /><br />Epi layer:                          Si/ P-doped/ n-type/ Thk 8/ Res 4.5;<br /><br />Isolation:                                                                   p-n junction<br /><br />p-base depth, µm                                                                    2.4<br /><br />N+emitter depth, µm                                                               1.7<br /><br />Emitter size, µm                                                                          6<br /><br />Distance between transistors, µm                                          6<br /><br />Switching: <br /><br />contacts 1, µm                                                                             4<br /><br />space line  Me 1, µm                                                                13