0 V, p-n junction isolation “Bp30-20”

0 V, p-n junction isolation “Bp30-20”

0 V, p-n junction isolation “Bp30-20”
  • Application, features: Small and medium-scale integration digital-analogue IC, VDD < 18 V<br /><br /> <br /><br />NPN transistor vertical:<br /><br />bn=150 Uce=28 V<br /><br />РNP transistor lateral:<br /><br />bр=35 Uсе=45 V<br /><br />РNP transistor  vertical:<br /><br />bр=35 Uсе=45 V<br /><br />I2L gate<br /><br />Capacitors:emitter-base; collector-base; Ме-n+;<br /><br />Ме1-Ме2.<br /><br />Resistors in layers:<br /><br />Isolation; Base; Resistor
  • Process Description: Number of masks, pcs.                                                  8-13<br /><br />Mean design rule,µm                                                        6.0<br /><br />Substrate:      Si/B-doped/ p-type/ Thk 460/ Res 10/  (111)<br /><br />Buried layers:           Si/ Sb-doped/ n-type/Thk 6.0/Res 20;<br /><br />                                 Si/ B-doped /p-type/Thk 1.95/Res210;<br /><br />Epi layer:                     Si/ P-doped/ n-type/ Thk 9/ Res 2.0;<br /><br />Isolation:                                                 p-n junction<br /><br />p-base depth, µm                                                              2.2<br /><br />N+emitter depth, µm                                                         1.7<br /><br />Emitter size, µm                                                                9*9<br /><br />Distance between transistors, µm                                    4<br /><br />Switching:  <br /><br />contacts 1, µm                                                                   3*3<br /><br />space line  Me 1, µm                                                         9.0<br /><br />contacts  2, µm                                                                  4*4<br /><br />space line Me 2, µm                                                       12.0
  • Тип карточки товара: Сложная
  • Application, features: Small and medium-scale integration digital-analogue IC, VDD < 18 V<br /><br /> <br /><br />NPN transistor vertical:<br /><br />bn=150 Uce=28 V<br /><br />РNP transistor lateral:<br /><br />bр=35 Uсе=45 V<br /><br />РNP transistor  vertical:<br /><br />bр=35 Uсе=45 V<br /><br />I2L gate<br /><br />Capacitors:emitter-base; collector-base; Ме-n+;<br /><br />Ме1-Ме2.<br /><br />Resistors in layers:<br /><br />Isolation; Base; Resistor
  • Process Description: Number of masks, pcs.                                                  8-13<br /><br />Mean design rule,µm                                                        6.0<br /><br />Substrate:      Si/B-doped/ p-type/ Thk 460/ Res 10/  (111)<br /><br />Buried layers:           Si/ Sb-doped/ n-type/Thk 6.0/Res 20;<br /><br />                                 Si/ B-doped /p-type/Thk 1.95/Res210;<br /><br />Epi layer:                     Si/ P-doped/ n-type/ Thk 9/ Res 2.0;<br /><br />Isolation:                                                 p-n junction<br /><br />p-base depth, µm                                                              2.2<br /><br />N+emitter depth, µm                                                         1.7<br /><br />Emitter size, µm                                                                9*9<br /><br />Distance between transistors, µm                                    4<br /><br />Switching:  <br /><br />contacts 1, µm                                                                   3*3<br /><br />space line  Me 1, µm                                                         9.0<br /><br />contacts  2, µm                                                                  4*4<br /><br />space line Me 2, µm                                                       12.0