BiCDMOS, LOCOS isolation, 1 PolySi, 1 Me, NMOS/PMOS transistors

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範圍	意義
Тип карточки товара	Сложная
Application, features	Low-voltage transistors: NMOS: Vtn= 1.8 V, Usd >16 V PMOS: Vtp= 1.5 V, Usd >16 V NPN: h21e= 100-300 Resistors in layer: PolySi 1= 20-30 Ohm/sq High-voltage transistors : NDMOS: Vtn= 1.0÷1.8 V, Usd >=500 V PDMOS: Vtp= 0.7÷2.0 V, Usd >=700 V
Process Description	Number of masks, pcs. 15 Min design rule,µm 2.8 Substrate: Si/B-doped/ p-type/ Res 80 Isolation: LOCOS P-well depth, µm 6.5 N-well depth, µm 4.5 NDMOS base depth, µm 2.4 Gate SiO2, Å 600 Interlayer dielectric – Medium temp. PSG, µm 0,6 Channel length (gate): N/PMOS, µm 2.0 Contacts, µm 2.0x2.0 Space line Me 1, µm 8 Space line Me 2, µm 10

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