BiCDMOS, LOCOS isolation, 1 PolySi, 1 Me, NMOS/PMOS transistors
BiCDMOS, LOCOS isolation, 1 PolySi, 1 Me, NMOS/PMOS transistors
- Application, features: Low-voltage transistors:<br /><br />NMOS: Vtn= 1.8 V, Usd >16 V<br /><br />PMOS: Vtp= 1.5 V, Usd >16 V<br /><br />NPN: h21e= 100-300<br /><br />Resistors in layer:<br /><br />PolySi 1= 20-30 Ohm/sq<br /><br /> <br /><br />High-voltage transistors :<br /><br />NDMOS: Vtn= 1.0÷1.8 V, Usd >=500 V<br /><br />PDMOS: Vtp= 0.7÷2.0 V, Usd >=700 V
- Process Description: Number of masks, pcs. 15<br /><br />Min design rule,µm 2.8<br /><br />Substrate: Si/B-doped/ p-type/ Res 80<br /><br />Isolation: LOCOS<br /><br />P-well depth, µm 6.5<br /><br />N-well depth, µm 4.5<br /><br />NDMOS base depth, µm 2.4<br /><br />Gate SiO2, Å 600<br /><br />Interlayer dielectric – Medium temp. PSG, µm 0,6 <br /><br />Channel length (gate): N/PMOS, µm 2.0<br /><br />Contacts, µm 2.0x2.0<br /><br />Space line Me 1, µm 8<br /><br />Space line Me 2, µm 10
- Тип карточки товара: Сложная
- Application, features: Low-voltage transistors:<br /><br />NMOS: Vtn= 1.8 V, Usd >16 V<br /><br />PMOS: Vtp= 1.5 V, Usd >16 V<br /><br />NPN: h21e= 100-300<br /><br />Resistors in layer:<br /><br />PolySi 1= 20-30 Ohm/sq<br /><br /> <br /><br />High-voltage transistors :<br /><br />NDMOS: Vtn= 1.0÷1.8 V, Usd >=500 V<br /><br />PDMOS: Vtp= 0.7÷2.0 V, Usd >=700 V
- Process Description: Number of masks, pcs. 15<br /><br />Min design rule,µm 2.8<br /><br />Substrate: Si/B-doped/ p-type/ Res 80<br /><br />Isolation: LOCOS<br /><br />P-well depth, µm 6.5<br /><br />N-well depth, µm 4.5<br /><br />NDMOS base depth, µm 2.4<br /><br />Gate SiO2, Å 600<br /><br />Interlayer dielectric – Medium temp. PSG, µm 0,6 <br /><br />Channel length (gate): N/PMOS, µm 2.0<br /><br />Contacts, µm 2.0x2.0<br /><br />Space line Me 1, µm 8<br /><br />Space line Me 2, µm 10