双极互补金属氧化物半导体流程

Application, features: Small -scale integration analogue IC, VDD < 210 V NPN Vertical: bn =70 Uсе=50 V NDMOS: Vtn= 2.0 V, Usd >200 V PDMOS: Vtp= -1.0 V, Usd >200 V NMOS: Vtn= 1.5V, Usd >20V Resistors in layer: NPN base, Р-drain, PolySi. Capacitors: PolySi-Si (SiO2 900 Å) PolySi-Al (SiO2 1600 Å)
Process Description: Number of masks, pcs. 19 Min design rule,µm 4.0 Substrate: Si/B-doped/ p-type/ Thk 460/ Res 12/ (100) Buried layers: Si/Sb-doped/ n-type/Thk 30/Res 5.5; Si/B-doped/ p-type/Thk 300/Res2.0 ; Epi layer: Si/ P-doped/ n-type/ Thk 27/ Res 8.0; Isolation: p-n junction P-well depth, µm 6.5 NDMOS base depth, µm 3.0 Gate SiO2, Å 900 NPN p-base depth, µm 2.5 N+emitter depth, µm 0.8 Interlayer dielectric – medium temp. PSG 0,55mm +SIPOS 0.1µm + medium temp. PSG 1,1µm Channel length (gate): N/PDMOS, µm 6 Space line PolySi, µm 8 Contacts, µm Ø4 Space line Me, µm 12

Application, features: Low-voltage transistors: NMOS: Vtn= 1.8 V, Usd >16 V PMOS: Vtp= 1.5 V, Usd >16 V NPN: h21e= 100-300 Resistors in layer: PolySi 1= 20-30 Ohm/sq High-voltage transistors : NDMOS: Vtn= 1.0÷1.8 V, Usd >=500 V PDMOS: Vtp= 0.7÷2.0 V, Usd >=700 V
Process Description: Number of masks, pcs. 15 Min design rule,µm 2.8 Substrate: Si/B-doped/ p-type/ Res 80 Isolation: LOCOS P-well depth, µm 6.5 N-well depth, µm 4.5 NDMOS base depth, µm 2.4 Gate SiO2, Å 600 Interlayer dielectric – Medium temp. PSG, µm 0,6 Channel length (gate): N/PMOS, µm 2.0 Contacts, µm 2.0x2.0 Space line Me 1, µm 8 Space line Me 2, µm 10

Application, features: Analogue-digital IC for TV-receivers, Ucc=8V NMOS: Vtn=0.6 V, Usd >12 V PMOS: Vtр=-0.9 V, Usd >12 V NPN vertical: bn =120 Uce=10 V PNP lateral: bp =45 Uce=13 V
Process Description: Number of masks, pcs. 26 Design rule,µm 0.8 Substrate: Si/B-doped/ p-type/Res 3 Epitaxy: Si/P-doped/ n-type/ Thk 2.4/ Res 4.5 p-well depth with p+cc, µm 4.3 n-well depth with n+cc, µm 4.3 Gate SiO2, Å 130 Interlayer dielectric: BPSG Interlevel dielectric: PEoxide+ SOG NMOS/PMOS channel length, µm 0.9/1.0 N&P LDD- drains Me I Ti-TiN/Al-Si/TiN Me II Ti/Al-Si/TiN NPN emitter size, µm 1.2*3.2 Space line PolySi 2,µm 1.8 Contacts 1, µm Ø 0.9 Space line Me 1, µm 2.2 Contacts 2,µm Ø 0.9 Space line Me 2, µm 2.4

Application, features: Small and medium-scale integration analogue IC, VDD < 90 V NPN Vertical: bn =50 Uсе=20 V PNP Lateral: bр =25 Uсе=20 V LNDMOS: Vtn= 2.0 V, Usd >90 V LPDMOS: Vtp= -1.4 V, Usd >90 V NMOS: Vtn= 1.2 V, Usd >18 V PMOS: Vtp= 1.5 V, Usd >18 V VNDMOS: Vtn= 2.0 V, Usd >70 V Resistors in layer: NDMOS base, Р-drain, PolySi. Capacitors: PolySi-Si (SiO2 750Å) PolySi-Al (SiO2 8000 Å)
Process Description: Numberofmasks, pcs. 19 Min design rule,µm 4.0 Substrate: Si/B-doped/ p-type/ Thk 460/ Res 12/ (100) Buried layers: Si/Sb-doped/ n-type/Thk 20/Res 6; Si/B-doped/ p-type/Thk 250/Res2.0 ; Epi layer: Si/P-doped/ n-type/ Thk 10/ Res 1.5; Isolation: p-n junction P-well depth, µm 6.5 NDMOS base depth, µm 2.5 Gate SiO2, Å 750 NPN p-base depth, µm 2.5 N+emitter depth, µm 0.5 Interlayer dielectric - BPSG, µm 0,8 Channel length (gate): N/PMOS, µm Ø 4 Space line PolySi, µm 7 Contacts, µm 2 Space line Me, µm 8

Application, features: SMPS-IC Low voltage NPN: h21E 50 min, Uсе 30V min PNP Lateral: h21E=2,2-30 Uсе=25-60 V NDMOS: Vtn=1.2-3.0 V, Usd >=30 V Low voltage PMOS: Vtp=0.8-2.0 V, Usd >=18 V High voltage PMOS: Vtp=0.8-2.0 V, Usd >=22 V Low voltage NMOS: Vtn=0.8-2.0 V, Usd >=18 V High voltage NMOS: Vtn=0.8-2.0 V, Usd >=600 V
Process Description: Number of masks, pcs. 15 Min design rule,µm 3.0 Substrate: Si/B-doped/ p-type/ Thk 460/ Res 60/ (100) Isolation: p-n junction NDMOS base depth, µm 2.5 Gate SiO2, Å 750 Interlayer dielectric – medium temp. PSG, µm 0,8

Application, features: Power electronics actuator IC NPN Vertical: h21E=25-90 Uсе=20-70 V PNP Lateral: h21E=2,2-30 Uсе=25-60 V NDMOS: Vtn=1.8-2.6В, Usd=60-100 V Low voltage PMOS: Vtp=0.8-1.4 V, Usd =20-35 V High voltage PMOS: Vtp=1.2-2.2 V, Usd =30-80 V NMOS transistor: Vtn=1.1-1.7 V, Usd =15-25 V
Process Description: Number of masks, pcs. 16 Min design rule,µm 3.0 Substrate: Si/B-doped/ p-type/ Thk 460/ Res 12/ (100) Buried layers: Si/Sb-doped/ n-type/Thk 20/Res 6; Si/B-doped/ p-type/Thk 250/Res2.0 Epi layer: Si/P-doped/ n-type/ Thk 12/ Res 1.5; Isolation: p-n junction P-well depth, µm 5.0 Gate SiO2, Å 750 Interlayer dielectric – Medium temp. PSG, µm 0,8