8 V, 0.8 µm, BiCMOS, 3 Poly Si,2 Me, PolySi-emitters, 150mm wafers

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範圍	意義
Тип карточки товара	Сложная
Application, features	Analogue-digital IC for TV-receivers, Ucc=8V NMOS: Vtn=0.6 V, Usd >12 V PMOS: Vtр=-0.9 V, Usd >12 V NPN vertical: bn =120 Uce=10 V PNP lateral: bp =45 Uce=13 V
Process Description	Number of masks, pcs. 26 Design rule,µm 0.8 Substrate: Si/B-doped/ p-type/Res 3 Epitaxy: Si/P-doped/ n-type/ Thk 2.4/ Res 4.5 p-well depth with p+cc, µm 4.3 n-well depth with n+cc, µm 4.3 Gate SiO2, Å 130 Interlayer dielectric: BPSG Interlevel dielectric: PEoxide+ SOG NMOS/PMOS channel length, µm 0.9/1.0 N&P LDD- drains Me I Ti-TiN/Al-Si/TiN Me II Ti/Al-Si/TiN NPN emitter size, µm 1.2*3.2 Space line PolySi 2,µm 1.8 Contacts 1, µm Ø 0.9 Space line Me 1, µm 2.2 Contacts 2,µm Ø 0.9 Space line Me 2, µm 2.4

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