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90 V, p-n junction isolation, 1 PolySi, 1 Me, NMOS/PMOS low-voltage transistors, NDMOS/PDMOS high-voltage lateral transistors, power vertical NDMOS transistor, bipolar vertical NPN & lateral PNP transistors

90 V, p-n junction isolation, 1 PolySi, 1 Me, NMOS/PMOS low-voltage transistors, NDMOS/PDMOS high-voltage lateral transistors, power vertical NDMOS transistor, bipolar vertical NPN & lateral PNP transistors

範圍 意義
Тип карточки товара Сложная
Application, features Small and medium-scale integration analogue IC, VDD <  90 V

NPN Vertical:

bn =50 Uсе=20 V

PNP Lateral:

bр =25 Uсе=20 V

LNDMOS: Vtn= 2.0 V, Usd >90 V

LPDMOS: Vtp= -1.4 V, Usd >90 V

NMOS: Vtn= 1.2 V, Usd >18 V

PMOS: Vtp= 1.5 V, Usd >18 V

VNDMOS: Vtn= 2.0 V, Usd >70 V

 

Resistors in layer:

NDMOS base, Р-drain, PolySi.

Capacitors: PolySi-Si (SiO2 750Å)

PolySi-Al (SiO2 8000 Å)
Process Description Numberofmasks, pcs.                                             19

Min design rule,µm                                              4.0

Substrate:          Si/B-doped/  p-type/ Thk 460/ Res 12/ (100)

Buried layers:                  Si/Sb-doped/ n-type/Thk 20/Res 6;

                                      Si/B-doped/ p-type/Thk 250/Res2.0 ;

Epi layer:                     Si/P-doped/ n-type/ Thk 10/ Res 1.5;

Isolation:                                                    p-n junction

P-well depth, µm                                                     6.5

NDMOS base depth, µm                                         2.5

Gate SiO2, Å                                                          750

NPN p-base depth, µm                                            2.5

N+emitter depth, µm                                               0.5

Interlayer dielectric - BPSG, µm                             0,8                                           

Channel length (gate):

N/PMOS, µm                                                         Ø 4

Space line PolySi, µm                                                7

Contacts, µm                                                              2

Space line Me, µm                                                     8
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