Bipolar technology for the manufacture of high-power npn-transistors with operating voltage of 1500 V

規格
購買和技術。支持

範圍	意義
Тип карточки товара	Сложная
Application, features	UCE = 1500 V UCE = (700-800) V Ic= (5-12) A
Process Description	Substrate: Si/ P-irradiated /Res 102- 90 8 masks (contact): Base: ion implantation depth, µm 20-26 Emitter : diffusion, depth, µm 10-15 collector-base p-n junction protection : SiPOS Metallization : Al 4, 5 µm Radiation treatment to ensure dynamics Backside matting Backside: Ti-Ni-Ag sputtering

訂購

小批量产品供应订单的订单，成本和履行条款由消费者与ojsc"INTEGRAL"的营销和销售服务达成一致-控股"INTEGRAL"的管理公司
销售部电话。 (+37517)2123850: (+375 17) 212 15 13, e-mail:sales@integral by
市场销售部：电话。 (+37517)2121810,tepefax: (+375 17) 212 20 31, 电子邮件: market@integral.by
订购特殊用途产品的先决条件是由企业负责人和客户代表（军事代表）签署申请，由适当的印章和签名认证！