20 V, p-n junction isolation

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購買和技術。支持

範圍	意義
Тип карточки товара	Сложная
Application, features	Small and medium-scale integration digital-analogue IC, VDD < 18 V NPN Vertical: bn=150 Uce=28 V РNP Lateral: bр=35 Uсе=45 V РNP Vertical: bр=35 Uсе=45 V I2L gate Capacitors:emitter-base; collector-base; Ме-n+; Ме1-Ме2. Resistors in layers: Isolation; Base; Resistor
Process Description	Number of masks, pcs. 13 Mean design rule,µm 6.0 Substrate: Si/B-doped/ p-type/ Thk 460/ Res 10/ (111) Buried layers: Si/Sb-doped/ n-type/Thk 5/Res 17; Si/B-doped/ p-type/Thk 1.6/Res510; Epi layer: Si/P-doped/ N-type/ Thk 10/ Res 1.25; Isolation: p-n junction p-base depth, µm 2.4 N+emitter depth, µm 1.7 Emitter size, µm 6 Distance between transistors, µm 6 Switching: contacts 1, µm 4 space line Me 1, µm 13.0 contacts 2, µm 4*4 space line Me 2, µm 12.0

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