Power field MOS transistors, Umax= 60÷900 V, 150 mm wafers
Power field MOS transistors, Umax= 60÷900 V, 150 mm wafers
- Application, features: MOSFET<br /><br />NMOS: Vtn=2÷4 V<br /><br />Umax= 60÷900 V
- Process Description: Number of masks, pcs. 8<br /><br />Min design rule,µm 2.0<br /><br />Substrate: Si/Sb-doped/ n-type/Res 0,015; <br /><br /> Si/ As-doped/ n-type/ Res 0,003<br /><br />Epi layer:<br /><br />thickness 8÷75) µm<br /><br />Resistivity (0,67÷31,5) Ohm/cm<br /><br />Gate oxide (60÷100) nm<br /><br />Interlayer dielectric medium temp. oxide + BPSG <br /><br />Passivation PEoxide + PE SI3N4
- Тип карточки товара: Сложная
- Application, features: MOSFET<br /><br />NMOS: Vtn=2÷4 V<br /><br />Umax= 60÷900 V
- Process Description: Number of masks, pcs. 8<br /><br />Min design rule,µm 2.0<br /><br />Substrate: Si/Sb-doped/ n-type/Res 0,015; <br /><br /> Si/ As-doped/ n-type/ Res 0,003<br /><br />Epi layer:<br /><br />thickness 8÷75) µm<br /><br />Resistivity (0,67÷31,5) Ohm/cm<br /><br />Gate oxide (60÷100) nm<br /><br />Interlayer dielectric medium temp. oxide + BPSG <br /><br />Passivation PEoxide + PE SI3N4