• Тип карточки товара: Сложная
• Application, features: MOSFET
  
  Low-power
  
  Vtn= 0,6-3,0V
  
  Ubr=50-200V
  
  Pmax=1,0 Watt
  
   
  
  High-power
  
  Vtn= 2,0-4,0V
  
  Ubr=50-600V
  
  Pmax=200 Watt
• Process Description: Number of masks, pcs.                                              7-9<br /><br />Min design rule,µm                                                      3.0<br /><br />Substrate:                        Si/Sb-doped/ n-type/Res 0,01<br /><br />Epi layer: <br /><br />Thickness                                                          (9÷42) µm<br /><br />Resistivity                                              (0,7÷16) Ohm/cm<br /><br />Gate oxide                                                    (42,5÷80) nm<br /><br />Interlayer dielectric -                        medium temp. PSG <br /><br />Passivation:                                               low temp. PSG