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Field N DMOS transistors

範圍 意義
Тип карточки товара Сложная
Application, features MOSFET

Low-power

Vtn= 0,6-3,0V

Ubr=50-200V

Pmax=1,0 Watt

 

High-power

Vtn= 2,0-4,0V

Ubr=50-600V

Pmax=200 Watt
Process Description Number of masks, pcs.                                              7-9

Min design rule,µm                                                      3.0

Substrate:                        Si/Sb-doped/ n-type/Res 0,01

Epi layer: 

Thickness                                                          (9÷42) µm

Resistivity                                              (0,7÷16) Ohm/cm

Gate oxide                                                    (42,5÷80) nm

Interlayer dielectric -                        medium temp. PSG 

Passivation:                                               low temp. PSG 
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