- Application, features: MOSFET
Low-power
Vtn= 0,6-3,0V
Ubr=50-200V
Pmax=1,0 Watt
High-power
Vtn= 2,0-4,0V
Ubr=50-600V
Pmax=200 Watt
- Process Description: Number of masks, pcs. 7-9<br /><br />Min design rule,µm 3.0<br /><br />Substrate: Si/Sb-doped/ n-type/Res 0,01<br /><br />Epi layer: <br /><br />Thickness (9÷42) µm<br /><br />Resistivity (0,7÷16) Ohm/cm<br /><br />Gate oxide (42,5÷80) nm<br /><br />Interlayer dielectric - medium temp. PSG <br /><br />Passivation: low temp. PSG
- Тип карточки товара: Сложная
- Application, features: MOSFET
Low-power
Vtn= 0,6-3,0V
Ubr=50-200V
Pmax=1,0 Watt
High-power
Vtn= 2,0-4,0V
Ubr=50-600V
Pmax=200 Watt
- Process Description: Number of masks, pcs. 7-9<br /><br />Min design rule,µm 3.0<br /><br />Substrate: Si/Sb-doped/ n-type/Res 0,01<br /><br />Epi layer: <br /><br />Thickness (9÷42) µm<br /><br />Resistivity (0,7÷16) Ohm/cm<br /><br />Gate oxide (42,5÷80) nm<br /><br />Interlayer dielectric - medium temp. PSG <br /><br />Passivation: low temp. PSG