• Тип карточки товара: Сложная
• Av (V/mV) Min: 4
• Battery Current, IBAT1 (max), nA: 4
• Battery Supply Voltage, VBAT: 4
• External Caps (mF): 4
• Features: 3
• Frequency, kHz: 2
• FT, МHz: 1
• Functions: 12H/24H: 1
• Process Description: Number of masks, pcs.                                             7-9<br /><br />Min design rule,µm                                                     3.0<br /><br />Substrate:                      Si/B-doped/ p-type/Res 0,005<br /><br />Epi layer: <br /><br />thickness                                                        (15-34) µm<br /><br />Resistivity                                               (2÷21) Ohm/cm<br /><br />Gate oxide                                                  (42,5÷80) nm<br /><br />Interlayer dielectric                        medium temp. PSG <br /><br />Passivation:                                            low temp. PSG 
• U меж.баз., В (max): 324
• Ucc ЖКИ,В: 23423
• Uds, В: 4324
• Ui max, В: 324
• Uo, В: 32423
• Uref, В, (max): 423
• Uref, В, (min): 423
• The prototype: UT54ACS164245