Field P DMOS transistors

規格
購買和技術。支持

範圍	意義
Тип карточки товара	Сложная
Av (V/mV) Min	4
Battery Current, IBAT1 (max), nA	4
Battery Supply Voltage, VBAT	4
External Caps (mF)	4
Features	3
Frequency, kHz	2
FT, МHz	1
Functions: 12H/24H	1
Process Description	Number of masks, pcs. 7-9 Min design rule,µm 3.0 Substrate: Si/B-doped/ p-type/Res 0,005 Epi layer: thickness (15-34) µm Resistivity (2÷21) Ohm/cm Gate oxide (42,5÷80) nm Interlayer dielectric medium temp. PSG Passivation: low temp. PSG
U меж.баз., В (max)	324
Ucc ЖКИ,В	23423
Uds, В	4324
Ui max, В	324
Uo, В	32423
Uref, В, (max)	423
Uref, В, (min)	423
The prototype	UT54ACS164245

訂購

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