1.2 µm CMOS PROM, 2 PolySi, 2 Me, zappable link
1.2 µm CMOS PROM, 2 PolySi, 2 Me, zappable link
- Application, features: CMOS master-slice chip<br /><br /> NMOS: <br /><br />Vtn=1.0 V, Ic >10 mA. Ubr>12V<br /><br /> <br /><br />PMOS: <br /><br />Vtр=1.0 V, Ic >4.0 mA, Ubr>12V
- Process Description: Number of masks, pcs. 11<br /><br />Design rule,µm 1.2<br /><br />Substrate: Si/B-doped / p-type/Res 12<br /><br />N/P-well depth, µm 5/6<br /><br />Gate SiO2, Å 250-300<br /><br />Interlayer dielectric: BPSG<br /><br />Channel length: NMOS/PMOS, µm 2.0<br /><br />Contacts, µm 2.0x2.0<br /><br />Space line Me1, µm 8<br /><br />Space line Me 2, µm 10
- Тип карточки товара: Сложная
- Application, features: CMOS master-slice chip<br /><br /> NMOS: <br /><br />Vtn=1.0 V, Ic >10 mA. Ubr>12V<br /><br /> <br /><br />PMOS: <br /><br />Vtр=1.0 V, Ic >4.0 mA, Ubr>12V
- Process Description: Number of masks, pcs. 11<br /><br />Design rule,µm 1.2<br /><br />Substrate: Si/B-doped / p-type/Res 12<br /><br />N/P-well depth, µm 5/6<br /><br />Gate SiO2, Å 250-300<br /><br />Interlayer dielectric: BPSG<br /><br />Channel length: NMOS/PMOS, µm 2.0<br /><br />Contacts, µm 2.0x2.0<br /><br />Space line Me1, µm 8<br /><br />Space line Me 2, µm 10