1.2 µm CMOS, 1 PolySi, 2 Me
1.2 µm CMOS, 1 PolySi, 2 Me
- Application, features: CMOS master-slice chip<br /><br /> NMOS: <br /><br />Vtn=0.7 V, Ic >11.5 mA. Ubr>12V<br /><br />PMOS: <br /><br />Vtр=0.8 V, Ic >4.5 mA, Ubr>12V
- Process Description: Number of masks, pcs. 11<br /><br />Design rules,µm 1.2<br /><br />Substrate: Si/B-doped/ p-type/Res 12<br /><br />N/P-wells depth, µm 5/6<br /><br />Gate SiO2, Å 250-300<br /><br />Interlayer dielectric: BPSG<br /><br />Channel length: NMOS/PMOS, µm 1.4/1.6<br /><br />Space line PolySi, µm 2.8<br /><br />Contacts, µm 1.6x1.6<br /><br />Space line Me1, µm 3.4<br /><br />Space line Me2, µm 3
- Тип карточки товара: Сложная
- Application, features: CMOS master-slice chip<br /><br /> NMOS: <br /><br />Vtn=0.7 V, Ic >11.5 mA. Ubr>12V<br /><br />PMOS: <br /><br />Vtр=0.8 V, Ic >4.5 mA, Ubr>12V
- Process Description: Number of masks, pcs. 11<br /><br />Design rules,µm 1.2<br /><br />Substrate: Si/B-doped/ p-type/Res 12<br /><br />N/P-wells depth, µm 5/6<br /><br />Gate SiO2, Å 250-300<br /><br />Interlayer dielectric: BPSG<br /><br />Channel length: NMOS/PMOS, µm 1.4/1.6<br /><br />Space line PolySi, µm 2.8<br /><br />Contacts, µm 1.6x1.6<br /><br />Space line Me1, µm 3.4<br /><br />Space line Me2, µm 3