Bipolar technology for the manufacture of high-power npn-transistors with Darlington

Bipolar technology for the manufacture of high-power npn-transistors with Darlington

Bipolar technology for the manufacture of high-power npn-transistors with Darlington
  • Application, features: UCB = (300-350) V<br /><br />UCE = (150-350) V<br /><br /> Ic= (5-15) A<br /><br /> h21E >100
  • Process Description: Epi structure:<br /><br />Substrate:                         Si/ Sb-doped/ n-type/Res 0,01 (111):<br /><br />Thickness of Epi layer, µm                                                   27-38<br /><br />Resistivity, Ohm/cm                                                                  8-21<br /><br />6-7 masks (contact)<br /><br />Base: ion implantation,<br /><br />depth, µm                                                                                     6-8<br /><br />Emitter: diffusion,<br /><br />depth, µm                                                                              2,5-5,5<br /><br />collector-base p-n junction protection :                            SiPOS<br /><br />Metallization :                                                                   Al 4, 5 µm<br /><br />Backside:                                                                            Ti-Ni-Ag<br /><br />Passivation:                                                           Low temp. PSG
  • Тип карточки товара: Сложная
  • Application, features: UCB = (300-350) V<br /><br />UCE = (150-350) V<br /><br /> Ic= (5-15) A<br /><br /> h21E >100
  • Process Description: Epi structure:<br /><br />Substrate:                         Si/ Sb-doped/ n-type/Res 0,01 (111):<br /><br />Thickness of Epi layer, µm                                                   27-38<br /><br />Resistivity, Ohm/cm                                                                  8-21<br /><br />6-7 masks (contact)<br /><br />Base: ion implantation,<br /><br />depth, µm                                                                                     6-8<br /><br />Emitter: diffusion,<br /><br />depth, µm                                                                              2,5-5,5<br /><br />collector-base p-n junction protection :                            SiPOS<br /><br />Metallization :                                                                   Al 4, 5 µm<br /><br />Backside:                                                                            Ti-Ni-Ag<br /><br />Passivation:                                                           Low temp. PSG