-
Function:
N-Channel MOSFET 900 V;1.4 ?-9 A
-
Package:
TO-247
-
Function:
N-Channel MOSFET 650 V; 0.85 ?-10 A
-
Package:
Chip
-
Function:
N-Channel MOSFET 650 V;1.3 ?-7 A
-
Package:
Chip
-
Function:
N-Channel MOSFET 600 V; 0.24 ?-28 A
-
Package:
Chip
-
Function:
N-Channel MOSFET 600 V; 0.32 ?-20 A
-
Package:
Chip
-
Function:
N-Channel MOSFET 600 V; 0.7 ?-12 A
-
Package:
Chip
-
Pin to Pin Compatibility:
2N2647
-
Ie pulse, A:
2
-
Ie rev, mA:
0.2
-
n:
0.68...0.82
-
Package:
Case 22A-01
-
Vb, b2 max, V:
35
-
Veb sat, V:
0.7…3.5
-
Р max, W:
0.3
-
Pin to Pin Compatibility:
BU941ZP
-
hFE:
>300
-
IC max, mA:
15000
-
ICBO, mA:
100
-
Package:
TO-218
-
Polarity:
NPN
-
VCB max, V:
350
-
VCE max, V:
350
-
VEB max, V:
5
-
РC max, W:
155
-
Pin to Pin Compatibility:
S2506-02
-
Function:
Photo-diode
-
Package:
Special 2-pin package
-
Pin to Pin Compatibility:
MUR0520FM
-
Max Reverse Voltage UREV.MAX (V):
200
-
Max.Reverse Recovery Time tREC, ns:
250
-
Non repetive Peak Surge Current IP. max (A):
35
-
Package:
TO-220
-
Pin to Pin Compatibility:
MR2537L
-
Function:
Power limiting diode for rectifying bridges of alternator plant IRECT=35A; UBR=18-23V
-
Package:
DO-21, TO-220
-
Pin to Pin Compatibility:
2N4871
-
Ie rev, mA:
1
-
n:
0.70...0.85
-
Package:
TO-92
-
Vb, b2 max, V:
35
-
Veb sat, V:
0.7…2.5
-
Р max, W:
0.3
-
Pin to Pin Compatibility:
ВТА208-600В
-
Gate Trigger Current, Igt, mA:
≤50
-
I2t, for Fusing, I2t, A2c:
21
-
Latching Current, IL, mA:
≤60
-
Off-State Leakage Current, Id,Ir,mA:
≤0.5
-
Package:
TO-220AB
-
Peak Gate Current, Igm, A:
2
-
Repetitive Peak Off-State Voltages, V drm, Vrrm, V:
600
-
RMS On-State Current, It (RMS):
8
-
Pin to Pin Compatibility:
MU0140A4
-
Max Reverse Voltage UREV.MAX (V):
400
-
Max.Reverse Recovery Time tREC, ns:
60
-
Package:
TO-220
-
Pin to Pin Compatibility:
MR2535L
-
Function:
Power limiting diode for rectifying bridges of alternator plant IRECT=35A; UBR=36-46V
-
Package:
DO-21, TO-220
-
Function:
N-Channel MOSFET 800 V;2.4 ?-4.3 A
-
Package:
TO-220/3
-
Pin to Pin Compatibility:
2N2646
-
Ie pulse, A:
2
-
Ie rev, mA:
12
-
n:
0.56...0.75
-
Package:
Case 22A-01
-
Vb, b2 max, V:
35
-
Veb sat, V:
0.7…3.5
-
Р max, W:
0.3
-
Pin to Pin Compatibility:
MUR0540UM
-
Max Reverse Voltage UREV.MAX (V):
400
-
Max.Reverse Recovery Time tREC, ns:
60
-
Non repetive Peak Surge Current IP. max (A):
35
-
Package:
TO-220
-
Pin to Pin Compatibility:
MUR0520F
-
Max Reverse Voltage UREV.MAX (V):
200
-
Max. instantaneous reverse current (Т=25 С) IREV.,mA:
50
-
Max.Reverse Recovery Time tREC, ns:
250
-
Non repetive Peak Surge Current IP. max (A):
35
-
Package:
TO-220
-
Peak. Rectified Direct current IR.MAX. (А):
5
-
Function:
N-Channel MOSFET 650 V;5.5 ?-2 A
-
Package:
Chip
-
Pin to Pin Compatibility:
КУ251Б
-
Gate Trigger Current, Igt, mA:
≤0.2
-
I2t, for Fusing, I2t, A2c:
0.415
-
Latching Current, IL, mA:
≤5
-
Off-State Leakage Current, Id,Ir,mA:
≤0.05
-
Package:
OD-92
-
Peak Gate Current, Igm, A:
≤1.0
-
Repetitive Peak Off-State Voltages, V drm, Vrrm, V:
800
-
RMS On-State Current, It (RMS):
1
-
Pin to Pin Compatibility:
MUR0520U
-
Max Reverse Voltage UREV.MAX (V):
200
-
Max. instantaneous reverse current (Т=25 С) IREV.,mA:
50
-
Max.Reverse Recovery Time tREC, ns:
25
-
Non repetive Peak Surge Current IP. max (A):
35
-
Package:
TO-220
-
Peak. Rectified Direct current IR.MAX. (А):
5
-
Pin to Pin Compatibility:
ВТА208-800В
-
Gate Trigger Current, Igt, mA:
≤50
-
I2t, for Fusing, I2t, A2c:
21
-
Latching Current, IL, mA:
≤60
-
Off-State Leakage Current, Id,Ir,mA:
≤0.5
-
Package:
TO-220
-
Peak Gate Current, Igm, A:
2
-
Repetitive Peak Off-State Voltages, V drm, Vrrm, V:
800
-
RMS On-State Current, It (RMS):
8
-
Function:
N-Channel MOSFET500 V; 0.850 ?-8 A
-
Package:
TO-220FP
-
Pin to Pin Compatibility:
МСR100-8
-
Gate Trigger Current, Igt, mA:
≤0.2
-
I2t, for Fusing, I2t, A2c:
0.415
-
Latching Current, IL, mA:
≤5
-
Off-State Leakage Current, Id,Ir,mA:
≤0.05
-
Package:
TO-92
-
Peak Gate Current, Igm, A:
≤1.0
-
Repetitive Peak Off-State Voltages, V drm, Vrrm, V:
600
-
RMS On-State Current, It (RMS):
1
