半导体仪器

半导体仪器

IFL50N50

  • Function: N-Channel MOSFET 500 V; 0.120 ?-50 A
  • Package: Chip

IFP740

  • Function: N-Channel MOSFET 400 V; 0.550 ?-10 A
  • Package: TO-220/3

IFP70N06

  • Function: N-Channel MOSFET 60 V; 0.015 ?-70 A
  • Package: Chip

IFP634

  • Function: N-Channel MOSFET250 V; 0.450 ?-8 A
  • Package: Chip

IFF4N60

  • Function: N-Channel MOSFET 600 V;2.5 ?-4.0 A
  • Package: TO-220FP

IFP2N60

  • Function: N-Channel MOSFET 600 V;5.0 ?-2 A
  • Package: TO-220/3

IFW9N90

  • Function: N-Channel MOSFET 900 V;1.4 ?-9 A
  • Package: TO-247

IFF840

  • Function: N-Channel MOSFET500 V; 0.850 ?-8 A
  • Package: TO-220FP

IFU1N65

  • Function: N-Channel MOSFET 650 V; 13.0 ?-1 A
  • Package: Chip

IFP75N08

  • Function: N-Channel MOSFET 80 V; 0.015 ?-75 A
  • Package: TO-220/3

IFW24N60

  • Function: N-Channel MOSFET 600 V; 0.26 ?-24 A
  • Package: Chip

IFF630

  • Function: N-Channel MOSFET 200 V; 0.400 ?-9 A
  • Package: Chip

IFU2N65

  • Function: N-Channel MOSFET 650 V;5.5 ?-2 A
  • Package: Chip

IFF7N65

  • Function: N-Channel MOSFET 650 V;1.3 ?-7 A
  • Package: Chip

IFP7N65

  • Function: N-Channel MOSFET 650 V;1.3 ?-7 A
  • Package: Chip

IFL40N60

  • Function: N-Channel MOSFET 600 V; 0.16 ?-40 A
  • Package: Chip

IFW10N80

  • Function: N-Channel MOSFET 800 V; 1.1 ?-10 A
  • Package: TO-247

IFF12N60

  • Function: N-Channel MOSFET 600 V; 0.7 ?-12 A
  • Package: Chip

IFU2N60

  • Function: N-Channel MOSFET 600 V; 5.0 ?-1.8 A
  • Package: I-PAK

IFD1N60

  • Function: N-Channel MOSFET 600 V; 12.000 ?-0.9 A
  • Package: D-PAK

IFP1N80

  • Function: N-Channel MOSFET 800 V; 18.0 ?-1.2 A
  • Package: TO-220/3

IFP840

  • Function: N-Channel MOSFET 500 V; 0.850 ?-8 A
  • Package: TO-220/3

KT133Б

  • Pin to Pin Compatibility: 2N4871
  • Ie rev, mA: 1
  • n: 0.70...0.85
  • Package: TO-92
  • Vb, b2 max, V: 35
  • Veb sat, V: 0.7…2.5
  • Р max, W: 0.3

IFU1N80

  • Function: N-Channel MOSFET 800 V; 18.0 ?-1.2 A
  • Package: I-PAK

КУ251А

  • Pin to Pin Compatibility: МСR100-8
  • Gate Trigger Current, Igt, mA: ≤0.2
  • I2t, for Fusing, I2t, A2c: 0.415
  • Latching Current, IL, mA: ≤5
  • Off-State Leakage Current, Id,Ir,mA: ≤0.05
  • Package: TO-92
  • Peak Gate Current, Igm, A: ≤1.0
  • Repetitive Peak Off-State Voltages, V drm, Vrrm, V: 600
  • RMS On-State Current, It (RMS): 1

IWR0520FM

  • Pin to Pin Compatibility: MUR0520FM
  • Max Reverse Voltage UREV.MAX (V): 200
  • Max.Reverse Recovery Time tREC, ns: 250
  • Non repetive Peak Surge Current IP. max (A): 35
  • Package: TO-220

IFU1N60

  • Function: N-Channel MOSFET 600 V; 12.000 ?-0.9 A
  • Package: I-PAK

KT814A KT814Б KT814B KT814Г

  • Pin to Pin Compatibility: BD136 BD138 BD140
  • FT, МHz: 40
  • hFE: 40…275 40…275 40…275 30…275
  • IC max, mA: 1500
  • ICBO, mA: 50
  • Package: TO-126
  • Polarity: PNP
  • VCE max, V: 40 50 70 100
  • VCE sat, V: 0.6
  • VEB max, V: 5
  • РC max, W: 10

IFD2N65

  • Function: N-Channel MOSFET 650 V;5.5 ?-2 A
  • Package: Chip

IFW28N60

  • Function: N-Channel MOSFET 600 V; 0.24 ?-28 A
  • Package: Chip