半导体仪器

半导体仪器

IFF10N65

  • Function: N-Channel MOSFET 650 V; 0.85 ?-10 A
  • Package: Chip

IFF4N65

  • Function: N-Channel MOSFET 650 V;2.7 ?-4 A
  • Package: Chip

IFP2N65

  • Function: N-Channel MOSFET 650 V;5.5 ?-2 A
  • Package: Chip

IFW20N60

  • Function: N-Channel MOSFET 600 V; 0.32 ?-20 A
  • Package: Chip

IFF2N60

  • Function: N-Channel MOSFET 600 V;5.0 ?-2 A
  • Package: TO-220FP

IFP10N65

  • Function: N-Channel MOSFET 650 V; 0.85 ?-10 A
  • Package: Chip

IFP630

  • Function: N-Channel MOSFET 200 V; 0.400 ?-9 A
  • Package: Chip

IFU1N65

  • Function: N-Channel MOSFET 650 V; 13.0 ?-1 A
  • Package: Chip

IFW24N60

  • Function: N-Channel MOSFET 600 V; 0.26 ?-24 A
  • Package: Chip

IFW10N80

  • Function: N-Channel MOSFET 800 V; 1.1 ?-10 A
  • Package: TO-247

IFF630

  • Function: N-Channel MOSFET 200 V; 0.400 ?-9 A
  • Package: Chip

IFW9N90

  • Function: N-Channel MOSFET 900 V;1.4 ?-9 A
  • Package: TO-247

IFP7N65

  • Function: N-Channel MOSFET 650 V;1.3 ?-7 A
  • Package: Chip

IFP1N80

  • Function: N-Channel MOSFET 800 V; 18.0 ?-1.2 A
  • Package: TO-220/3

IFF12N60

  • Function: N-Channel MOSFET 600 V; 0.7 ?-12 A
  • Package: Chip

IFP2N60

  • Function: N-Channel MOSFET 600 V;5.0 ?-2 A
  • Package: TO-220/3

IFU2N60

  • Function: N-Channel MOSFET 600 V; 5.0 ?-1.8 A
  • Package: I-PAK

IFU2N65

  • Function: N-Channel MOSFET 650 V;5.5 ?-2 A
  • Package: Chip

IFP840

  • Function: N-Channel MOSFET 500 V; 0.850 ?-8 A
  • Package: TO-220/3

КУ251А

  • Pin to Pin Compatibility: МСR100-8
  • Gate Trigger Current, Igt, mA: ≤0.2
  • I2t, for Fusing, I2t, A2c: 0.415
  • Latching Current, IL, mA: ≤5
  • Off-State Leakage Current, Id,Ir,mA: ≤0.05
  • Package: TO-92
  • Peak Gate Current, Igm, A: ≤1.0
  • Repetitive Peak Off-State Voltages, V drm, Vrrm, V: 600
  • RMS On-State Current, It (RMS): 1

IFU1N60

  • Function: N-Channel MOSFET 600 V; 12.000 ?-0.9 A
  • Package: I-PAK

KT133Б

  • Pin to Pin Compatibility: 2N4871
  • Ie rev, mA: 1
  • n: 0.70...0.85
  • Package: TO-92
  • Vb, b2 max, V: 35
  • Veb sat, V: 0.7…2.5
  • Р max, W: 0.3

IFU1N80

  • Function: N-Channel MOSFET 800 V; 18.0 ?-1.2 A
  • Package: I-PAK

КУ613А

  • Pin to Pin Compatibility: ВТА208-600В
  • Gate Trigger Current, Igt, mA: ≤50
  • I2t, for Fusing, I2t, A2c: 21
  • Latching Current, IL, mA: ≤60
  • Off-State Leakage Current, Id,Ir,mA: ≤0.5
  • Package: TO-220AB
  • Peak Gate Current, Igm, A: 2
  • Repetitive Peak Off-State Voltages, V drm, Vrrm, V: 600
  • RMS On-State Current, It (RMS): 8

IFF7N65

  • Function: N-Channel MOSFET 650 V;1.3 ?-7 A
  • Package: Chip

IFW28N60

  • Function: N-Channel MOSFET 600 V; 0.24 ?-28 A
  • Package: Chip

IFP640

  • Function: N-Channel MOSFET 200 V; 0.180 ?-18 A
  • Package: Chip

IFD1N60

  • Function: N-Channel MOSFET 600 V; 12.000 ?-0.9 A
  • Package: D-PAK

IFP85N06

  • Function: N-Channel MOSFET 60 V; 0.012 ?-85 A
  • Package: Chip

IFD2N65

  • Function: N-Channel MOSFET 650 V;5.5 ?-2 A
  • Package: Chip