5 V, 3 µm CMOS, 1 PolySi, 1 Me
5 V, 3 µm CMOS, 1 PolySi, 1 Me
- Application, features: Small and medium-scale integration logic IC, VDD < 5 V<br /><br /> <br /><br /> NMOS: <br /><br />Vtn=0.8-1.2 V, Ic >4 mA. Ubr>8V<br /><br />PMOS: <br /><br />Vtр=0.8-1.2 V, Ic >2 mA, Ubr>8V
- Process Description: Number of masks, pcs. 11<br /><br />Design rule,µm 2.0<br /><br />Substrate: Si/P-doped/ n-type/Res 4.5<br /><br />N/P-wells depth, µm 6-8<br /><br />Gate SiO2, Å 425 / 300<br /><br />Interlayer dielectric: BPSG<br /><br />Channel length: NMOS/PMOS, µm 3-4<br /><br />Space line PolySi, µm 10<br /><br />Contacts, µm 4*4<br /><br />Space line Me, µm 10
- Тип карточки товара: Сложная
- Application, features: Small and medium-scale integration logic IC, VDD < 5 V<br /><br /> <br /><br /> NMOS: <br /><br />Vtn=0.8-1.2 V, Ic >4 mA. Ubr>8V<br /><br />PMOS: <br /><br />Vtр=0.8-1.2 V, Ic >2 mA, Ubr>8V
- Process Description: Number of masks, pcs. 11<br /><br />Design rule,µm 2.0<br /><br />Substrate: Si/P-doped/ n-type/Res 4.5<br /><br />N/P-wells depth, µm 6-8<br /><br />Gate SiO2, Å 425 / 300<br /><br />Interlayer dielectric: BPSG<br /><br />Channel length: NMOS/PMOS, µm 3-4<br /><br />Space line PolySi, µm 10<br /><br />Contacts, µm 4*4<br /><br />Space line Me, µm 10