5 V, 2 µm CMOS, 1 PolySi, 1 Me
5 V, 2 µm CMOS, 1 PolySi, 1 Me
- Application, features: Small and medium-scale integration logic IC, VDD < 5 V<br /><br /> <br /><br />NMOS: Vtn=0.6/ 0.5 V, Usd >12 V<br /><br />PMOS: Vtр=-0,7V/-0,5, Usd >14 V
- Process Description: Number of masks, pcs. 11<br /><br />Design rule, µm 2.0<br /><br />Substrate: Si/ /n -type/ Phosphorus/Res 4.5, 2 wells <br /><br />N/P-well depth, µm 6/7<br /><br />Gate SiO2, Å 425/300<br /><br />Interlayer dielectric: BPSG<br /><br />Channel length: NMOS/PMOS, µm 2.5<br /><br />Space line PolySi, µm 4.5 <br /><br />Contacts, µm 2.4*2.4<br /><br />Space line Me, µm 8.5
- Тип карточки товара: Сложная
- Application, features: Small and medium-scale integration logic IC, VDD < 5 V<br /><br /> <br /><br />NMOS: Vtn=0.6/ 0.5 V, Usd >12 V<br /><br />PMOS: Vtр=-0,7V/-0,5, Usd >14 V
- Process Description: Number of masks, pcs. 11<br /><br />Design rule, µm 2.0<br /><br />Substrate: Si/ /n -type/ Phosphorus/Res 4.5, 2 wells <br /><br />N/P-well depth, µm 6/7<br /><br />Gate SiO2, Å 425/300<br /><br />Interlayer dielectric: BPSG<br /><br />Channel length: NMOS/PMOS, µm 2.5<br /><br />Space line PolySi, µm 4.5 <br /><br />Contacts, µm 2.4*2.4<br /><br />Space line Me, µm 8.5