5 V, 1.5 µm CMOS, 1 PolySi, 1 Ме, PolySi- resistors, 150mm wafers
5 V, 1.5 µm CMOS, 1 PolySi, 1 Ме, PolySi- resistors, 150mm wafers
- Application, features: Supply voltage controllers <br /><br />NMOS:<br /><br />Vtn= 0.5 V, Usd >10 V<br /><br />PMOS:<br /><br />Vtp= 0.5V, Usd >10 V
- Process Description: Number of masks, pcs. 17<br /><br />Design rule,µm 1.5<br /><br />Substrate: Si/B-doped/p-type/Res 12; 2 wells <br /><br />N/P-well depth, µm 5/6<br /><br />P-type PolySi resistors<br /><br />Bipolar vertical NPN transistor<br /><br />Gate SiO2, Å 250<br /><br />Interlayer dielectric: BPSG<br /><br />Channel length: NMOS/PMOS, µm 1.7<br /><br />N&P LDD- drains<br /><br />Space line PolySi, µm 2.5<br /><br />Contacts, µm Ø 1.3<br /><br />Space line Me, µm 3.5
- Тип карточки товара: Сложная
- Application, features: Supply voltage controllers <br /><br />NMOS:<br /><br />Vtn= 0.5 V, Usd >10 V<br /><br />PMOS:<br /><br />Vtp= 0.5V, Usd >10 V
- Process Description: Number of masks, pcs. 17<br /><br />Design rule,µm 1.5<br /><br />Substrate: Si/B-doped/p-type/Res 12; 2 wells <br /><br />N/P-well depth, µm 5/6<br /><br />P-type PolySi resistors<br /><br />Bipolar vertical NPN transistor<br /><br />Gate SiO2, Å 250<br /><br />Interlayer dielectric: BPSG<br /><br />Channel length: NMOS/PMOS, µm 1.7<br /><br />N&P LDD- drains<br /><br />Space line PolySi, µm 2.5<br /><br />Contacts, µm Ø 1.3<br /><br />Space line Me, µm 3.5