5 V, 1.5 µm CMOS, 1 PolySi, 1 Ме, PolySi- resistors, 150mm wafers

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範圍	意義
Тип карточки товара	Сложная
Application, features	Supply voltage controllers NMOS: Vtn= 0.5 V, Usd >10 V PMOS: Vtp= 0.5V, Usd >10 V
Process Description	Number of masks, pcs. 17 Design rule,µm 1.5 Substrate: Si/B-doped/p-type/Res 12; 2 wells N/P-well depth, µm 5/6 P-type PolySi resistors Bipolar vertical NPN transistor Gate SiO2, Å 250 Interlayer dielectric: BPSG Channel length: NMOS/PMOS, µm 1.7 N&P LDD- drains Space line PolySi, µm 2.5 Contacts, µm Ø 1.3 Space line Me, µm 3.5

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