5 V, 1.5 µm CMOS, 1 PolySi, 1 Me, 150mm wafers

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範圍	意義
Тип карточки товара	Сложная
Application, features	Digital IMC, microcontrollers with VDD= 5V NMOS: Vtn= 0.6V, Usd >10 V PMOS: Vtp= 1.0V, Usd >13 V
Process Description	Number of masks, pcs. 16 Design rule,µm 1.5 Substrate: Si/B-doped/ p-type/Res 12 2 wells N/P-well depth, µm 5/6 Interlayer dielectric: BPSG Gate SiO2, Å 250 Interlayer dielectric: BPSG Transistor built in ROM Buried contacts Channel length: NMOS/PMOS, µm 1.5 N & P LDD- drains space line PolySi,µm 2.5 contacts, µm Ø 1.5 space line Me,µm 3.5

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