1.5 V, 1.6 µm CMOS, 1 PolySi, 1 Me, low threshold, 150mm wafers

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範圍	意義
Тип карточки товара	Сложная
Application, features	Medium-scale integration digital IC for electronic timepieces and micro calculators, VDD 1.5 V¸3 V. NMOS: Vtn= 0.5 V, Usd >10 V PMOS: Vtp= -0.5 V, Usd >10 V
Process Description	Number of masks, pcs. 11 Design rule,µm 1.6 Substrate: Si/ B-doped/ p-type/Res 12 2 wells N/P-well depth, µm 5/6 Gate SiO2, Å 300 Interlayer dielectric – BPSG Channel length: NMOS/PMOS, µm 2.0 space line PolySi , µm 3.2 contacts, µm Ø 1.5 space line Me, µm 3.6

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