Bipolar technology for the manufacture of transistors, triacs

Bipolar technology for the manufacture of transistors, triacs

Bipolar technology for the manufacture of transistors, triacs
  • Application, features: IT (on-state) = 2,0 A<br /><br />Ubr = (600-800)V
  • Process Description: Substrate:                                            Si/ P-irradiated / Res 35<br /><br />10 masks (contact, two-side)<br /><br />Base: boron diffusion,<br /><br />depth, µm                                                                             35-45<br /><br />Cathode : phosphorous diffusion,<br /><br />depth, µm                                                                             15-18<br /><br />p-n junction protection:  SiPOS, Si3N4, medium temp. PSG<br /><br />Metallization :                                                               Al 2,0 mm<br /><br />Passivation:                                             low temp. PSG, Si3N4<br /><br />Backside:                                                                           Ti-Ni-Ag
  • Тип карточки товара: Сложная
  • Application, features: IT (on-state) = 2,0 A<br /><br />Ubr = (600-800)V
  • Process Description: Substrate:                                            Si/ P-irradiated / Res 35<br /><br />10 masks (contact, two-side)<br /><br />Base: boron diffusion,<br /><br />depth, µm                                                                             35-45<br /><br />Cathode : phosphorous diffusion,<br /><br />depth, µm                                                                             15-18<br /><br />p-n junction protection:  SiPOS, Si3N4, medium temp. PSG<br /><br />Metallization :                                                               Al 2,0 mm<br /><br />Passivation:                                             low temp. PSG, Si3N4<br /><br />Backside:                                                                           Ti-Ni-Ag