20 V,p-n junction isolation “Bp30С-20” complementary
範圍 | 意義 |
---|---|
Тип карточки товара | Сложная |
Application, features | Small and medium-scale integration digital-analogue IC, VDD < 18 V NPN transistor vertical: bn=150 Uce=27 V РNP transistor lateral: bр=30 Uсе=35 V РNP transistor vertical: bр=45 Uсе=35 V РNP Vertical with isolated collector: bр=80 Uсе=30 V Capacitors:emitter-base; collector base; Ме-n+; Ме1-Ме2. Resistors in layers: Isolation; Base; Resistor |
Process Description | Number of masks, pcs. 12-14 Mean design rule,µm 6.0 Substrate: Si/B-doped/ p-type/ Thk 460/ Res 10/ (111) Buried layers: Si/Sb-doped/n-type/Thk 6.0/Res 20; Si/ B-doped/p-type/Thk 1.95/Res 210; Epi layer: Si/P-doped/ n-type/ Thk 8/ Res 1.5; Isolation: p-n junction p-base depth, µm 2.0 N+emitter depth, µm 1.7 Emitter size, µm 7*7 Distance between transistors, µm 4 Switching: contacts 1, µm 3*3 space line Me 1, µm 9.0 contacts 2, µm 4*4 space line Me 2, µm 12.0 |
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销售部电话。 (+37517)2123850: (+375 17) 212 15 13, e-mail:sales@integral by
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订购特殊用途产品的先决条件是由企业负责人和客户代表(军事代表)签署申请,由适当的印章和签名认证!