BiCDMOS 48 V, p-n junction isolation, 1 PolySi, 1 Me

BiCDMOS 48 V, p-n junction isolation, 1 PolySi, 1 Me

BiCDMOS 48 V, p-n junction isolation, 1 PolySi, 1 Me
  • Application, features: Power electronics actuator  IC<br /><br />NPN Vertical:<br /><br />h21E=25-90 Uсе=20-70 V<br /><br />PNP Lateral:<br /><br />h21E=2,2-30 Uсе=25-60 V<br /><br />NDMOS: Vtn=1.8-2.6В, Usd=60-100 V<br /><br />Low voltage PMOS:<br /><br />Vtp=0.8-1.4 V, Usd =20-35 V<br /><br />High voltage PMOS:<br /><br />Vtp=1.2-2.2 V, Usd =30-80 V<br /><br />NMOS  transistor:<br /><br />Vtn=1.1-1.7 V, Usd =15-25 V
  • Process Description: Number of masks, pcs.                                               16<br /><br />Min design rule,µm                                                      3.0<br /><br />Substrate:            Si/B-doped/ p-type/ Thk 460/ Res 12/ (100)<br /><br />Buried layers:                  Si/Sb-doped/ n-type/Thk 20/Res 6;<br /><br />                                       Si/B-doped/ p-type/Thk 250/Res2.0<br /><br />Epi layer:                      Si/P-doped/ n-type/ Thk 12/ Res 1.5;<br /><br />Isolation:                                                         p-n junction<br /><br />P-well depth, µm                                                          5.0<br /><br />Gate SiO2, Å                                                                750<br /><br />Interlayer dielectric – Medium temp. PSG, µm       0,8
  • Тип карточки товара: Сложная
  • Application, features: Power electronics actuator  IC<br /><br />NPN Vertical:<br /><br />h21E=25-90 Uсе=20-70 V<br /><br />PNP Lateral:<br /><br />h21E=2,2-30 Uсе=25-60 V<br /><br />NDMOS: Vtn=1.8-2.6В, Usd=60-100 V<br /><br />Low voltage PMOS:<br /><br />Vtp=0.8-1.4 V, Usd =20-35 V<br /><br />High voltage PMOS:<br /><br />Vtp=1.2-2.2 V, Usd =30-80 V<br /><br />NMOS  transistor:<br /><br />Vtn=1.1-1.7 V, Usd =15-25 V
  • Process Description: Number of masks, pcs.                                               16<br /><br />Min design rule,µm                                                      3.0<br /><br />Substrate:            Si/B-doped/ p-type/ Thk 460/ Res 12/ (100)<br /><br />Buried layers:                  Si/Sb-doped/ n-type/Thk 20/Res 6;<br /><br />                                       Si/B-doped/ p-type/Thk 250/Res2.0<br /><br />Epi layer:                      Si/P-doped/ n-type/ Thk 12/ Res 1.5;<br /><br />Isolation:                                                         p-n junction<br /><br />P-well depth, µm                                                          5.0<br /><br />Gate SiO2, Å                                                                750<br /><br />Interlayer dielectric – Medium temp. PSG, µm       0,8